Recombination Radiation Spectra in ZnSiP<sub>2</sub> Crystals

Alekperova, E. E.; Valov, Yu. A.; Goryunova, N. A.; Ryvkin, S.M.; Shpenkov, George P.

doi:10.1002/pssb.19690320106

Cited by 30 publications

(2 citation statements)

References 2 publications

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“…Subsequently, there are lower PL emissions observed in the MA 0.5 /FA 0.5 film, followed by The weak emission from MAPbI 3 can be attributed to the reduced density of surface trap states, resulting in a decrease in non-radiative pathways [33]. Consequently, recombination occurs during the radiative stage [34]. The photoluminescence spectra of the MA/FA mixtures are consistent with the XRD and SEM results.…”

Section: Optical Propertiessupporting

confidence: 79%

Optimization of the MA/FA Ratio in the Structure of Absorber Layers Based on MA(1-x)FAxPbI3 Perovskites for Stable and Efficient Solar Cells

Idrissa Diomandé,

Amal Bouich,

Mina Nezamisavojbolaghi

et al. 2023

Advanced Energy Conversion Materials

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Herein, we investigate the mixture of methylammonium lead iodide (MAPbI3) and formamidinium lead iodide (FAPbI3). The perovskite films were coated onto fluorine-doped tin oxide (FTO) glass substrates using a spin-coating method, with the spin-coater set at 4,000 rpm for 20 s. We studied the influence of incorporation in MA(1-x) FA(x)PbI3 films. The crystal structure of the perovskite films was characterized using X-ray diffraction (XRD). Optical properties were assessed using UV-Vis spectroscopy with a spectrophotometer, and photoluminescence (PL) was characterized using a He-Cd Si-CCD laser source and a Hamamatsu detector. Images depicting the characteristic morphology of the films were captured with a scanning electron microscope (SEM). Our measurements reveal that the crystallinity of the MAPbI3 thin film improved with the incorporation of FAPbI3. In the case of 70% FAPbI3, the morphology of the MA30FA70PbI3 mixture also improved, exhibiting a rough surface with pores. The optical properties were enhanced, and the mixed thin film demonstrated better stability compared to pure MAPbI3 and FAPbI3 thin films. These film characteristics indicate that the mixtures are particularly suitable for use in photovoltaic applications.

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Section: Optical Propertiessupporting

confidence: 79%

Optimization of the MA/FA Ratio in the Structure of Absorber Layers Based on MA(1-x)FAxPbI3 Perovskites for Stable and Efficient Solar Cells

Idrissa Diomandé,

Amal Bouich,

Mina Nezamisavojbolaghi

et al. 2023

Advanced Energy Conversion Materials

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“…The long wavelength edge of the spectral response closely resembles the ZnSiP 2 absorbance spectrum, indicating that photocurrent is limited by light absorption, as expected due to the symmetry forbidden nature of transitions at the band gap. 29,38,83 This arises because the electric dipole transition between the valence band maximum (VBM) and conduction band minimum (CBM) is forbidden by a selection rule. 58 The crystals were also thick (0.5-2 mm) relative to the expected absorption depth of the photons, so it is likely that many photocarriers recombined in the bulk before they could be collected.…”

Section: Photovoltaic Characterizationmentioning

confidence: 99%

Solar energy conversion properties and defect physics of ZnSiP₂

Martinez

Warren

Gorai

et al. 2016

Energy Environ. Sci.

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Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP 2 is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP 2 photovoltaic device. We show that ZnSiP 2 has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP 2 are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP 2 and related materials as photovoltaic absorber materials. Broader ContextOf all the renewable energy technologies, solar photovoltaic electricity has one of the highest resource potentials; there is enough energy in the sunlight incident on the surface of the earth to meet the world's energy demands many times over (∼10,000:1). However, significant market penetration requires photovoltaics to be cost competitive with fossil fuels, even when unsubsidized. Currently, balance of system costs, rather than module costs, represent the majority of the total installed cost. Thus, increasing module efficiency is attractive as high efficiency cells can reduce installation size and therefore cost. Tandem photovoltaic architectures can provide a transformative boost in module efficiency over the single junction alternative due to reduced thermalization losses. Silicon photovoltaics is a well established (>90% market share), high efficiency, low cost technology that provides a crystalline template to grow top cells upon. However, the top cell material must satisfy strict requirements, including high efficiency and long reliability, or its presence will simply reduce the performance of the silicon bottom cell. The primary top cell materials considered to date include III-V materials, but the cost of these materials and their sensitivity to defects have proven challenging. In this work, ZnSiP 2 emerges as a wide band gap absorber that has the potential to meet the requirements needed for a top cell in tandem silicon-based photovoltaics. † Electronic Supplementary Information (ESI) available:

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Herstellung und elektrische Eigenschaften von dotiertem ZnSiP₂

Siegel

Ziegler

Buhrig

et al. 1974

Cryst Res and Technol

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The properties of ZnSiP, crystals prepared by adding of Ga and In t o the melt differ essentially from that of undoped samples. Especially the activation energies determined from the temperature dependence of the Hall coefficient, prove that in both cases a real doping with shallow impurities has taken place. Ga and In act as donors suggesting the conclusion that Ga and In atoms substitute Zn atoms. The existence of strong electrical inhomogenities in a part of the samples is discussed.

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Recombination Radiation Spectra in ZnSiP₂ Crystals

Cited by 30 publications

References 2 publications

Optimization of the MA/FA Ratio in the Structure of Absorber Layers Based on MA(1-x)FAxPbI3 Perovskites for Stable and Efficient Solar Cells

Optimization of the MA/FA Ratio in the Structure of Absorber Layers Based on MA(1-x)FAxPbI3 Perovskites for Stable and Efficient Solar Cells

Solar energy conversion properties and defect physics of ZnSiP₂

Herstellung und elektrische Eigenschaften von dotiertem ZnSiP₂

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Recombination Radiation Spectra in ZnSiP2 Crystals

Cited by 30 publications

References 2 publications

Optimization of the MA/FA Ratio in the Structure of Absorber Layers Based on MA(1-x)FAxPbI3 Perovskites for Stable and Efficient Solar Cells

Optimization of the MA/FA Ratio in the Structure of Absorber Layers Based on MA(1-x)FAxPbI3 Perovskites for Stable and Efficient Solar Cells

Solar energy conversion properties and defect physics of ZnSiP2

Herstellung und elektrische Eigenschaften von dotiertem ZnSiP2

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Recombination Radiation Spectra in ZnSiP₂ Crystals

Solar energy conversion properties and defect physics of ZnSiP₂

Herstellung und elektrische Eigenschaften von dotiertem ZnSiP₂