Reconfigurable Carbon Nanotube Barristor

Abstract

As the semiconductor industry enters the post-Moore era, reconfigurability on the device level, that incorporates multifunction in a device unit to realize more complex systems with more compact logic gates, is a promising methodology to extend the development of integrated circuit industry. Here, a reconfigurable carbon nanotube (CNT) barristor is developed on the basis of a Schottky barrier (SB) CNT transistor. The device shows a significant rectifying characteristic and can be reconfigured to a forward rectifying mode or a backward rectifying mode by applying an appropriate gate voltage. The reconfigurability originates from the ambipolar characteristics of the CNT channel, and the rectification behaviors can be attributed to the drain-induced self-gating effect. Additional experiments reveal that it is the interfacial charge redistribution that plays the role of an additional gate on the SB near the drain. A gate-controllable half-wave rectifier has been fabricated by using the reconfigurable CNT barristor. The CNT barristor brings new functions to CNT electronic devices and also opens up a new methodology for future reconfigurable device design.

Reconfigurable Two-Dimensional Air-Gap Barristors

“…By introducing at least two independently controllable gates to the 2D ambipolar channels such as black phosphorene (BP), , MoTe 2 , , and WSe 2 , , the FETs can be reconfigured as p- and n-type transistors. Besides, reconfigurable diodes can be fabricated based on asymmetric contacts, − which can be used for switchable rectification and photodetection. Moreover, neuromorphic devices can be made by vdW heterostructures, such as WSe 2 /hBN or BP/ReS 2 .…”