Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates

A Novel Single Gate Controlled Nonvolatile Floating Program Gate Reconfigurable FET

“…[1,2] And RFET is possible to offer an advantage in programmable logic arrays and realizes various logic gates with fewer transistors than conventional CMOS technology. [3][4][5][6][7] Therefore, many researches on RFET have been carried out, including theoretical modeling, [8] materials and manufacturing related reports, [9] and expanded applications such as biosensors. [10] However, comparing to CMOS technology, the extra PG of RFET increases the complexity and difficulty of metal interconnection, and if the control gate (CG) is reversely biased, energy band bending between PG and CG will be enhanced and band to band tunneling (BTBT) effect happens and leakage current is formed and power consumption will be increased.…”

Insights into the Temperature‐Dependent Switching Behavior of Three‐Gated Reconfigurable Field‐Effect Transistors

“…[8] While both pertinence and benefits of this technology were already discussed in several works for either high [9,10] and low [11] temperature applications in the past, newer and more complex concepts of RFET devices, featuring for example multiple independent gates, [12,13] have been developed and must be characterized in terms of their temperature-dependent behavior. Beyond developing a better understanding of the operation of such devices in order to extend to different environmental conditions their applicability in fields where it was already suggested or proven, like hardware security, [14][15][16] it is important to point out how RFETs can successfully overcome many limitations typical for standard devices such as MOSFETs, thanks to their intrinsically distinct working principle. In fact, RFETs are Schottky barrier-based devices built on undoped semiconducting channels: [17,18] the absence of pn-junctions as well as dopant impurities plays a major role in presenting those devices as potential candidates able to provide an improved wide temperature range applicability.…”

Complementary Doped Source-Based Reconfigurable Schottky Diode as an Equivalence Logic Gate

“…The other gate is responsible for controlling the switch of the device and is usually called the control gate (CG) . Various RFETs have been proposed to improve conduction current, improve integration, and simplify processes. − Compared with complementary metal-oxide-semiconductor field-effect transistor (MOSFET) technology, RFET technology has a significant advantage that it can use fewer devices to realize various logic gates. − With the macro background that CMOS technology will reach the physical limit in the next decade, it is increasingly difficult to improve chip performance solely by reducing device size. Therefore, the RFET has become a research hotspot this year. − The common RFET simultaneously forms a Schottky barrier between the source/drain (S/D) electrode and the conduction and valence bands of dopingless semiconductors. − The tunneling effect is generated by adjusting the program gate voltage, then the S/D resistance generated by the Schottky barrier is reduced, and the carrier type gathered in the S/D region is selected by changing the polarity of the voltage; thus, the conduction type of the device is configured.…”

“… 2 − 4 Compared with complementary metal-oxide-semiconductor field-effect transistor (MOSFET) technology, RFET technology has a significant advantage that it can use fewer devices to realize various logic gates. 5 − 7 With the macro background that CMOS technology will reach the physical limit in the next decade, it is increasingly difficult to improve chip performance solely by reducing device size. Therefore, the RFET has become a research hotspot this year.…”