Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor

Abstract

Logic-in-memory architecture holds great promise to meet the high-performance and energy-efficient requirements of data-intensive scenarios. Two-dimensional compacted transistors embedded with logic functions are expected to extend Moore’s law toward advanced nodes. Here we demonstrate that a WSe2/h-BN/graphene based middle-floating-gate field-effect transistor can perform under diverse current levels due to the controllable polarity by the control gate, floating gate, and drain voltages. Such electrical tunable characteristics are employed for logic-in-memory architectures and can behave as reconfigurable logic functions of AND/XNOR within a single device. Compared to the conventional devices like floating-gate field-effect transistors, our design can greatly decrease the consumption of transistors. For AND/NAND, it can save 75% transistors by reducing the transistor number from 4 to 1; for XNOR/XOR, it is even up to 87.5% with the number being reduced from 8 to 1.

Ferroelectric Gate Enabled Programmable Photovoltaics in vdWHs for Self-Powered In-Memory Logics

“…Thus, the truth table of the AND logic obtained is listed in Figure 4f, and the basic logic operations as well as nonvolatile storage are successfully implemented, exhibiting the computing potential. Compared with polarity controllable operations 48 and the semifloating gate configuration, 34 the presented Fe-FED logic-in-memory configuration can operate at zero bias, which is self-driven by the photovoltage, and this is the first time that the function of photovoltaic in-memory logic has been realized.…”

Recent Advances in Tactile Sensory Systems: Mechanisms, Fabrication, and Applications

“…Combining friction potential with semiconductor devices, the carrier transportation of the semiconductor channel can be directly controlled by mechanical stimulus. The integration of TENG tactile sensors with Extended Gate Field Effect Transistor or EGFET [ 73 , 74 ], Ferroelectric Field Effect Transistor or FeFET [ 75 , 76 , 77 ], Floating-Gate Field Effect Transistor or FGFET [ 78 , 79 , 80 ], Semi-Floating-Gate Field Effect Transistor or SFGFET [ 81 ] and other neuromorphic transistors [ 82 , 83 ] has been used to develop self-powered tactile perception systems. The external force applied on the TENG is converted into voltage spikes, which are then captured by the neuromorphic transistor, producing PSC responses.…”

Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

“…Such reconfigurability with no more than two devices to construct a logic gate suggests great potential in high-density integration for inmemory computing architecture. Additionally, Sheng et al [27] fabricated a middle-floating-gate FET based on a WSe 2 /h-BN/graphene heterostructure to realize reconfigurable logic-128505-8 in-memory computing, see Fig. 8(d).…”

“…Therefore, they are considered as one of the most important candidates to overcome the size reduction bottleneck of transistors and have a wide range of applications in emerging electronic and optoelectronic devices. [26][27][28][29][30][31][32] Among various 2D materials, ambipolar 2D semiconductors are of ambipolar transport characteristics under gate voltage control with the major charge carriers flexibly modulated between electrons and holes at demanded concentrations. They have the ability to rapidly, dynamically, and reversibly tune the dominant carrier type through electric fields.…”