Reconfigurable magnetic domain wall pinning using vortex-generated magnetic fields

Hurst, Aaron; Izaac, Josh; Altaf, Fouzia; Baltz, Vincent; Metaxas, Peter J.

doi:10.1063/1.4982237

Cited by 6 publications

(1 citation statement)

References 41 publications

(43 reference statements)

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“…Importantly, since the DW is a mobile structure, the position of the pinning site (i.e., the top DW’s position) can be easily modulated, resulting in reconfigurable pinning for DW motion. We note that the similar idea has been proposed theoretically using the dipolar interaction between DW and vortex 28 but experimental demonstration has not yet been reported. To realize the proposed reconfigurable DW pinning, two conditions must be met: (1) the layer-layer interaction should be sufficiently weak, such that the two DWs can move independently, and (2) the bottom layer (driven layer) DW should be Néel-type with chirality such that it possess opposite magnetizations to the dipolar field from top layer’s DW.…”

Section: Introductionsupporting

confidence: 59%

Position-reconfigurable pinning for magnetic domain wall motion

Lee

Jeong²,

Kim³

et al. 2023

Sci Rep

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Precise control of magnetic domain wall (DW) motion is crucial for DW-based spintronic devices. To date, artificially designed DW pinning sites, such as notch structures, have been used to precisely control the DW position. However, the existing DW pinning methods are not reconfigurable because they cannot change the position of pinning site after being fabricated. Herein, a novel method for attaining reconfigurable DW pinning is proposed, which relies on the dipolar interactions between two DWs located in different magnetic layers. Repulsion between DWs in both layers was observed, indicating that one of the DWs acts as a pinning barrier for the other. Because the DW is mobile in the wire, the position of pinning can be modulated, thereby resulting in reconfigurable pinning that was experimentally demonstrated for current-driven DW motion. These findings provide additional controllability of DW motion, which may expand the functionality of DW-based devices to broader spintronic applications.

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Section: Introductionsupporting

confidence: 59%

Position-reconfigurable pinning for magnetic domain wall motion

Lee

Jeong²,

Kim³

et al. 2023

Sci Rep

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Pinning of domain walls in epitaxial garnet film patterned by surface arrays of ferromagnetic metal particles

Temiryazeva,

Kolmychek,

Temiryazev

et al. 2024

Journal of Magnetism and Magnetic Materials

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Domain wall resistance in a Co and Py transverse “coercivity heterostructures” configuration

et al. 2018

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A negative magnetoresistance (MR) was observed at room temperature in a Co/Py transverse “coercivity heterostructures” configuration thin film, and it can be explained by domain wall scattering at the boundaries of the Co and Py. We point out that the novel “soft” and “hard” transverse “coercivity heterostructures” not only can be used to study domain wall resistance of variety magnetic materials, but also have potential application in fabricating domain wall devices.

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Reconfigurable magnetic domain wall pinning using vortex-generated magnetic fields

Abstract: International audienc

Cited by 6 publications

References 41 publications

Position-reconfigurable pinning for magnetic domain wall motion

Position-reconfigurable pinning for magnetic domain wall motion

Pinning of domain walls in epitaxial garnet film patterned by surface arrays of ferromagnetic metal particles

Domain wall resistance in a Co and Py transverse “coercivity heterostructures” configuration

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