Reconfigurable package integrated 20 W RF power GaN HEMT with discrete thick‐film MIM BST varactors

Abstract

A novel package integrated solution for gallium nitride high‐electron‐mobility transistors with an electronically two‐dimensional reconfigurable L‐section matching network is presented. Thick‐film barium‐strontium‐titanate (BST) varactors are used to realise a tunability of the load impedance of 1:2 in resistive and 1:1.5 in reactive parts, respectively, applying tuning voltages of up to 200 V. The tuneable module achieves a peak output power of 43.2 dBm (20.9 W). Comparison with simulated results using field simulations and a large‐signal model shows good agreement in terms of output power and power added efficiency and thus proves the concept of using metal–insulator–metal BST varactors for reconfigurability.