Reconstructions of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">InP</mml:mi><mml:mn /><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo><mml:mi>A</mml:mi></mml:math>surface

Li, C. H.; Sun, Y.; Law, D. C.; Visbeck, S.; Hicks, Robert F.

doi:10.1103/physrevb.68.085320

Cited by 26 publications

(8 citation statements)

References 26 publications

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“…This suggests that a 90 s exposure of TMSb at 450°C is sufficient to saturate the GaAs ͑001͒ surface. The Sb coverage is estimated to be 0.85± 0.05 ML using a XPS model developed earlier, 21,22 and is consistent with the composition obtained by Whitman and coworkers in their thorough study of this surface. 20 Shown in Fig.…”

Section: -3supporting

confidence: 86%

The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)

Sun

Cheng

Chen

et al. 2005

Journal of Applied Physics

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The effect of an initial saturation coverage of antimony on the growth of indium arsenide quantum dots on gallium arsenide has been studied during metalorganic vapor-phase epitaxy. After depositing one to two bilayers of InAs at 723 K, the samples were quenched, transferred to ultrahigh vacuum, and characterized by scanning tunneling microscopy and x-ray photoelectron spectroscopy. It has been found that the critical thickness for onset of quantum dot formation is 33% less with Sb present as compared to without Sb. The antimony incorporates into the quantum dots, increasing their density and total volume, and causing them to be more densely clustered together.

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Section: -3supporting

confidence: 86%

The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)

Sun

Cheng

Chen

et al. 2005

Journal of Applied Physics

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“…We suppose the formation of surface structure originates from the reconstructions of InP (111)A surface. There are two reconstructions for InP (111)A surface, a (2 × 2), and a (

\sqrt{3} \times \sqrt{3}

) R30° . Sun and coworkers reported that the (2 × 2) phases would change into (

\sqrt{3} \times \sqrt{3}

) R30° phases when the surface temperature was lowered by 150 °C.…”

Section: Resultsmentioning

confidence: 99%

Formation and reduction of pyramidal hillocks on InGaAs/InP(111)A

Yamada

Ichikawa

Fukuhara

et al. 2015

Phys. Status Solidi B

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The formation and reduction of pyramidal hillocks on InGaAs/InP(111)A grown by metal organic chemical vapor deposition were investigated. The triangular pyramidal hillocks were observed on the InGaAs surface on on‐axis InP (111)A grown at 650 °C. The hillocks disappeared when the vicinal InP (111)A substrates with an off‐axis angle >0.4° were applied. The step and terrace surface of InGaAs on 4.0°‐off InP (111)A were obtained. InGaAs on on‐axis InP (111)A exhibited a hole concentration, mobility of Hall effect measurement, and full width at half‐maximum of X‐ray diffraction as 1.0 × 1017 cm−3, 56 cm2/V s, and 140 arcsec, respectively. In contrast, InGaAs on 2.0°‐off InP (111)A exhibited 2.3–1017 cm−3, 142 cm2/V s, and 63 arcsec, respectively. We suggest that off‐axis substrates enable a reduction of stacking faults, which leads to considerable improvement of crystallinity.

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“…These rows exhibit the zigzag pattern of the InP (001)-(2ϫ1) reconstruction. 21,25 The vertical distance from the (2ϫ1) rows to the top of the white spots is one atomic layer. It is concluded that the gray and white spots are due to clusters of arsenic atoms adsorbed on top of a full monolayer of As and P atoms.…”

Section: Resultsmentioning

confidence: 99%

“…This is in agreement with previous work that found evidence for the formation of a sharp, two-dimensional InAs/InP interface at 400-520°C. 8,9 Li et al 25 have identified the surface structures obtained after arsenic adsorption and exchange with phosphorus on indium phosphide under ultrahigh vacuum conditions. The reconstructions observed here are analogous to those seen in UHV.…”

Section: Low-temperature Tbas Exposurementioning

confidence: 99%

Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy

Law

Sun

et al. 2002

Phys. Rev. B

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We have studied the initial stages of heterojunction formation during the metalorganic vapor-phase epitaxy of indium arsenide on indium phosphide. Exposing an InP ͑001͒ film to 10 mTorr of tertiarybutylarsine below 500°C results in the deposition of a thin InAs layer from 1.5 to 5.0 atomic layers thick ͑2.3-7.5 Å͒. The surface of this epilayer remains atomically smooth independent of arsenic exposure time. However, in an overpressure of tertiarybutylarsine at or above 500°C, the arsenic atoms diffuse into the bulk, creating strained InAsP films. These films form three-dimensional island structures to relieve the built-up strain. The activation energy and pre-exponential factor for arsenic diffusion into indium phosphide have been determined to be E d ϭ1.7Ϯ0.2 eV and D o ϭ2.3Ϯ1.0ϫ10 Ϫ7 cm 2 /s.

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Reconstructions of theInP(111)Asurface

Cited by 26 publications

References 26 publications

The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)

The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001)

Formation and reduction of pyramidal hillocks on InGaAs/InP(111)A

Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy

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