Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-&lt;formula formulatype="inline"&gt; &lt;tex Notation="TeX"&gt;$\mu\hbox{m}$&lt;/tex&gt;&lt;/formula&gt; Buffer Thickness by Local Substrate Removal

Srivastava, Puneet; Das, Jo; Visalli, Domenica; Hove, M. Van; Malinowski, Paweł E.; Marcon, Denis; Lenci, Silvia; Geens, Karen; Cheng, Kai; Leys, Maarten; Decoutere, Stefaan; Mertens, R.; Borghs, Gustaaf

doi:10.1109/led.2010.2089493

Cited by 105 publications

(62 citation statements)

References 13 publications

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“…In an SS HFETs with an L GD =1 μm, the BV of 118 V is measured which is about fourfold higher than the result reported in (6). Without using field-plate (7) and buffer engineering technique (15) this value is already among the best reported results in GaN-based devices even compared with state-of-the-art AlGaN/GaN HFETs by linear scaling of L GD to 1 μm (8,9,10). Figure 8 plots the R on,sp versus BV of the SSD HFETs, SS HFETs and conventional HFETs for comparison.…”

Section: Schottky-source Inaln/gan Hfetsmentioning

confidence: 81%

High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications

et al. 2013

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In this paper, a novel approach of Schottky-contact technology for high voltage InAlN/GaN power transistors is demonstrated. The improved breakdown voltage (BV) attributes to the effectively suppressed source carrier injection achieved by the Schottky source metallization featuring excellent metal morphology. Without using field-plate structure and buffer engineering technique, the record three-terminal off-state BV of 650 V is obtained for InAlN/GaN HFET featuring a Schottky source. The corresponding specific on-resistance is as low as 3.4 mΩ·cm 2 . Moreover, the proposed Schottky-contact technology enables the removal of conventional alloyed Ohmic contact which is beneficial to device scaling. The BV of 58 V is measured in an InAlN/GaN HFET with L GD of 250 nm, which is the highest BV reported on GaN-based HFETs with such a short drift region. With simple fabrication process as well as the device structure while achieving a significant breakdown voltage enhancement, the proposed technology opens up new perspectives for designing high voltage InAlN/GaN HFET for power applications.

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Section: Schottky-source Inaln/gan Hfetsmentioning

confidence: 81%

High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications

et al. 2013

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“…5) Despite those promising results on breakdown voltages, the measured lateral breakdown electric field in AlGaN=GaN HEMTs, defined as the measured off-state breakdown voltage divided by the gate-to-drain distance (L gd ), was typically around 1 MV=cm, which is significantly lower than the theoretically predicted value of 3.3 MV=cm. Such unexpectedly lower values in breakdown electric field have been reported with AlGaN=GaN HEMTs fabricated on different substrate materials, such as Si, [9][10][11][13][14][15]17,18) sapphire, [2][3][4][5] and SiC. 1,8,12,16) So far, no clear explanation has been made regarding the discrepancy between the measured effective lateral breakdown field and the predicted value.…”

Section: Introductionmentioning

confidence: 89%

“…The off-state breakdown voltage, defined at a drain current of 1 mA=mm, exhibited a linear increase with the increase in L gd and reached 3.8 kV at L gd = 60 µm, beyond which the device showed saturation in the breakdown voltage at approximately 4 kV. From the gradient in the linear region of this plot, the effective breakdown electric field was derived to be 0.6 MV=cm, which is slightly lower than those reported in AlGaN=GaN HEMTs fabricated on foreign substrates such as Si, [9][10][11][13][14][15]17,18) sapphire, [2][3][4][5] and SiC. 1,8,12,16) Careful observations revealed that catastrophic breakdown was dominant in the linear region up to L gd = 60 µm, while the breakdown voltage was determined by the increased leakage current in the saturation region beyond L gd = 60 µm.…”

Section: Device Structure and Fabricationmentioning

confidence: 98%

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

Kuzuhara

Asubar

Tokuda

2016

Jpn. J. Appl. Phys.

117

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In this paper, we give an overview of the recent progress in GaN-based high-electron-mobility transistors (HEMTs) developed for mainstream acceptance in the power electronics field. The comprehensive investigation of AlGaN/GaN HEMTs fabricated on a free-standing semi-insulating GaN substrate reveals that an extracted effective lateral breakdown field of approximately 1 MV/cm is likely limited by the premature device breakdown originating from the insufficient structural and electrical quality of GaN buffer layers and/or the GaN substrate itself. The effective lateral breakdown field is increased to 2 MV/cm by using a highly resistive GaN substrate achieved by heavy Fe doping. Various issues relevant to current collapse are also discussed in the latter half of this paper, where a more pronounced reduction in current collapse is achieved by combining two different schemes (i.e., a prepassivation oxygen plasma treatment and a field plate structure) for intensifying the mitigating effect against current collapse. Finally, a novel approach to suppress current collapse is presented by introducing a three-dimensional field plate (3DFP) in AlGaN/GaN HEMTs, and its possibility of realizing true collapse-free operation is described.

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“…A step further for the most costeffective and industrially relevant GaN-on-silicon is the removal of the silicon, which limits the amount of power of the GaN-on-Si power HEMTs. Srivastava et al [34] reported in 2011 a record breakdown voltage for HEMT fabricated on <111> Si by a new local Si substrate removal technology with V BR = 2.2 kV for devices with gate-todrain distances of 20 µm (buffer thickness was only 2 µm). This is a remarkable enhancement compared to the reference (on bulk Silicon), which has a saturated V BR = 0.7 kV.…”

Section: Gan Power Devicesmentioning

confidence: 99%

Wide Band Gap Semiconductor Devices for Power Electronics

2012

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It is worldwide accepted today that a real breakthrough in the Power Electronics field may mainly come from the development and use of Wide Band Gap (WBG) semiconductor devices. WBG semiconductors such as SiC, GaN, and diamond show superior material properties, which allow operation at high-switching speed, high-voltage and high-temperature. These unique performances provide a qualitative change in their application to energy processing. From energy generation (carbon, oil, gas or any renewable) to the end-user (domestic, transport, industry, etc), the electric energy undergoes a number of conversions. These conversions are currently highly inefficient to the point that it is estimated that only 20% of the whole energy involved in energy generation reaches the end-user. WGB semiconductors increase the conversion efficiency thanks to their outstanding material properties. The recent progress in the development of high-voltage WBG power semiconductor devices, especially SiC and GaN, is reviewed. The performances of various rectifiers and switches, already demonstrated are also discussed. Material and process technologies of these WBG semiconductor devices are also tackled. Future trends in device development and industrialization are also addressed. Key words: SiC, GaN, Power devices, Rectifiers, MOSFETs, HEMTsWide Band Gap poluvodički sklopivi za učinsku elektroniku. U današnje vrijeme napredak u polju učinske elektronike prvenstveno dolazi razvojem i uporabom Wide Band Gap (WGB) poluvodičkih uredaja. WBG poluvodiči kao Sic, GaN i dijamant pokazuju iznimna svojstva materijala, što omogućuje korištenje pri brzim promjenama stanja, visokim naponima i visokim temperaturama. Ova jedinstvena svojstva osiguravaju kvalitativne promjene njihovom primjenon u obradi energije. Od početnih energenata (ugljen, ulje, plin ili obnovljivi izvori) do završne faze korištenja (kućanstvo, prijevoz, industrija) električna energija prolazi kroz različite faze pretvorbe energije koje su trenutno prilično neefikasne očemu govori podatak da se samo 20% početne energije iskoristi u konačnoj fazi. WGB poluvodiči povečavaju efikasnost pretvorbe zahvaljujući izvanrednim svojstvima materijala. U radu je dan pregled nedavnog napretka u razvoju visoko-naponskih WGB poluvodiča, posebno SiC i GaN te je dan pregled svojstava predstavljenih ispravljača i sklopki. Takoder u radu su opisani materijali i tehnologija WGB poluvodičkih uredaja te je opisan budući trend u razvoju uredaja i njihovom korištenju u industriji.

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Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2-<formula formulatype="inline"> <tex Notation="TeX">$\mu\hbox{m}$</tex></formula> Buffer Thickness by Local Substrate Removal

Cited by 105 publications

References 13 publications

High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications

High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications

AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

Wide Band Gap Semiconductor Devices for Power Electronics

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