Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process

Kivambe, Maulid; Haschke, Jan; Horzel, Jörg; Aïssa, Brahim; Abdallah, Amir; Belaidi, Abdelhak; Monnard, R.; Barraud, Loris; Descoeudres, Antoine; Debrot, F.; Despeisse, Matthieu; Boccard, Mathieu; Ballif, Christophe; Tabet, Nouar

doi:10.1021/acsaem.9b00608

Cited by 14 publications

(10 citation statements)

References 51 publications

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“…For instance, Jay et al 96 demonstrated that large‐area n‐type a‐Si:H/c‐Si heterojunction solar cells using cast mono‐like silicon wafers as substrate can achieve efficiency over 21.5%, of which the I – V curve is shown in Figure 27. Kivambe et al 97 also reported a record efficiency of 22.58% and 22.15% for n‐type and p‐type cast mono‐like silicon‐based hetero‐junction solar cells on small area, respectively. It is worth noting that the n‐type and p‐type cast mono‐like silicon wafers were P‐diffusion gettered before cell fabrication processes, and therefore, the wafer quality was much improved for the record hetero‐junction solar cells.…”

Section: Cell Efficiency Potential Of Cast Mono‐like Siliconmentioning

confidence: 97%

Defect engineering in cast mono‐like silicon: A review

Song

2020

Progress in Photovoltaics

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Cast mono‐like silicon is a promising material for next‐generation silicon solar cells with higher efficiency and lower cost compared with currently commercialized silicon solar cells. So far, cast mono‐like silicon technique still faces several problems, including multicrystallization, dislocation clusters, sub‐grain boundaries, and impurity contamination, which hinder its mass‐scale applications in photovoltaic industry. In this review, we will introduce these common problems in turn and discuss a multitude of the reported studies on eliminating these problems. Furthermore, light and elevated temperature‐induced degradation (LeTID) was recently reported to be a severe problem of cast mono‐like silicon solar cells, which can cause power loss over 10% relative. This review will introduce the behaviors and the proposed mechanisms of LeTID as well as the methods to suppress LeTID in Section 4. In the subsequent section, the efficiency potential and distribution of cast mono‐like silicon solar cells are discussed. At last, a comprehensive summary will be given for this review.

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Section: Cell Efficiency Potential Of Cast Mono‐like Siliconmentioning

confidence: 97%

Defect engineering in cast mono‐like silicon: A review

Song

2020

Progress in Photovoltaics

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“…A subsequent low-temperature hydrogen passivation process can then be used to passivate boron-oxygen defects, thereby eliminating light-induced degradation (LID), one of the key arguments in heading to the use of n-type wafers and the SHJ technology. [1,11,35] Figure 1 shows a comparison of the process flow for SHJ and PERC solar cells, highlighting the natural incorporation of defect engineering in the PERC process flow.…”

Section: Doi: 101002/pssr202100170mentioning

confidence: 99%

“…Kivambe et al demonstrated high efficiencies in both p‐type and n‐type cast mono wafers using a defect engineering approach prior to SHJ cell fabrication. [ 35 ] Cast mono or quasi‐mono wafers are formed via the solidification of molten silicon in a crucible with a partially melted silicon seed crystal. This approach produces wafers that are higher quality than the standard multicrystalline wafers formed via casting and has cost benefits compared to the conventional Cz growth process.…”

Section: Defect Engineering Approachesmentioning

confidence: 99%

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Progress with Defect Engineering in Silicon Heterojunction Solar Cells

Wright

Stefani

Soeriyadi

et al. 2021

Physica Rapid Research Ltrs

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Silicon heterojunction (SHJ) solar cells are formed by the deposition of stacks of intrinsic and doped hydrogenated amorphous silicon layers (a-Si:H) on the surface of crystalline silicon (c-Si) wafers. [1][2][3] The doped a-Si:H layers determine the carrier selectivity of each contact, which defines the direction of current flow, and the intrinsic a-Si:H layers, which are deposited directly onto the crystalline silicon (c-Si) surface, provide excellent surface passivation. [4,5] The cells are completed by the deposition of a transparent conducting oxide (TCO) to aid lateral conduction and the formation of metal contacts, typically by screen printing of silver. [6][7][8] This technology was pioneered in the 1990s by Japanese company Sanyo. [9][10][11] The solar photovoltaics (PV) market is currently dominated by the passivated emitter and rear cell (PERC) design. [12,13] Compared to PERC, SHJ solar cells have multiple advantages. They have demonstrated higher open circuit voltages (V OC ), with V OC values as high as 750 mV. [9] The high V OC is related to the excellent surface passivation provided by the a-Si:H layers. The world record 1 sun efficiency of 26.7% for a single-junction silicon solar cell was achieved using this approach, [14] and cells with efficiency exceeding 25% have been fabricated in an industrial environment. [15] Another advantage of SHJ cells, which is linked to the high V OC , is the lower temperature coefficient, meaning that power losses in SHJ cells operated at elevated temperatures are lower than in other siliconbased technologies. [2,16] Therefore, under realistic cell-operation conditions in the field, the actual power output of an SHJ module will be higher than that of a PERC module, even if they have the same power rating at room temperature. In addition, the expected rise of tandem solar cells with silicon as the bottom cell has also increased interest in the SHJ technology, as it is well suited as the bottom cell in a tandem device. [17][18][19][20][21][22] These advantages mean that industry is seriously looking into SHJ solar cells as a technology to compete with PERC in the future. The ITRPV 11th edition indicates that the market share for SHJ cells is expected to increase to 15% over the next ten years [23] which will represent a significant volume as we move toward terawatt-scale photovoltaics. [24] One unique aspect of SHJ cells is that all processing occurs in a low-temperature regime, typically <250 C. [4,16,25] This is very different to most other cell architectures, such as aluminium

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“…The solar cells, which can directly convert sunlight into electrical energy, are undoubtedly the core device of photovoltaic power generation, where the single crystal silicon (sc-Si) solar cell occupied more and more market share due to the continuous technological progress and cost reduction [4,5]. Moreover, the n type silicon show huge potential in developing low-cost and high-efficiency solar cells in the future due to its natural advantages of low light attenuation, high minority carrier lifetime [6,7]. Surface texture is an important optical management strategy for high-efficient silicon solar cell devices [8].…”

Section: Introductionmentioning

confidence: 99%

Surface Texturing Behavior of Nano-copper Particles under Various Copper Salts System during Copper-assisted Chemical Etching

Hong¹,

Ma²,

Chen³

et al. 2021

Preprint

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In this work, the effects of different copper salts on the etching behavior of n-type monocrystalline silicon wafers were detailedly studied by Cu-assisted chemical etching method. Firstly, the inverted pyramid, inverted pyramid-like and oval pit texturing structures were obtained by HF/H2O2/Cu(NO3)2, HF/H2O2/CuSO4 and HF/H2O2/CuCl2 etching systems. Then, the evolution of copper particles deposition behavior was studied to reveal the influencing mechanism of different anion species, the textured wafer surfaces were characterized by scanning electron microscopy (SEM) and ultraviolet-visible (UV) spectrophotometer, the etching rate, silicon wafer thinning and the deposition amount of copper particle was systematically analyzed. We conclude that the binding force between anion and cation, the oxidation of anions and the formation of complex groups [CuCl2]− lead to great difference in the deposition behavior of copper, resulting in different etching morphology and etching rate. The moderate size copper particles deposited from HF/H2O2/Cu(NO3)2 system make that the etching process is mild and the anisotropic etching ability can fully demonstrated, and the regular inverted pyramid structures can be formed under low thinning of silicon wafers. This work will provide guidance for controllable preparation of inverted pyramid structure and future application in high efficiency solar cells.

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Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process

Cited by 14 publications

References 51 publications

Defect engineering in cast mono‐like silicon: A review

Defect engineering in cast mono‐like silicon: A review

Progress with Defect Engineering in Silicon Heterojunction Solar Cells

Surface Texturing Behavior of Nano-copper Particles under Various Copper Salts System during Copper-assisted Chemical Etching

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