Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs

Li, Weiyi; Romanczyk, Brian; Guidry, Matthew; Akso, Emre; Hatui, Nirupam; Wurm, Christian; Liu, Wenjian; Shrestha, Pawana; Collins, Henry; Clymore, Christopher; Keller, S.; Mishra, Umesh K.

doi:10.1109/ted.2023.3240683

Cited by 29 publications

(11 citation statements)

References 26 publications

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“…Atomic layer deposited (ALD) Ru was shown to effectively fill in the T-shaped gate trench to help realize shorter gate length below 60 nm and minimize the gate resistance, giving rise to an output power density of 6.2 W mm −1 with a high PAE of 33.8% at 94 GHz (figures 8(c) and (d)) [165]. A record-high 9.65 dB linear transducer gain and demonstrated 42% PAE with associated 4.4 W mm −1 of output power density at 94 GHz have also been demonstrated for N-polar HEMTs on sapphire substrates [179].…”

Section: Rf Devices 2321 Rf and Mm-wave Hemtsmentioning

confidence: 68%

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Woo,

Bian,

Noshin

et al. 2024

J. Phys. Mater.

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Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga2O3. For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.

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Section: Rf Devices 2321 Rf and Mm-wave Hemtsmentioning

confidence: 68%

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Woo,

Bian,

Noshin

et al. 2024

J. Phys. Mater.

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“…In addition, to minimize the buffer trapping effects, it is necessary to engineer the epitaxial structure and materials. Several structures have been suggested such as a carbon-doped (C-doped) GaN buffer, a graded AlGaN channel and N-polar HEMTs [12][13][14][15][16][17][18][19][20]. Secondly, to reduce the buffer trapping effects, back barrier structures were introduced such as AlGaN and InGaN.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Epitaxial Structures on GaN-on-Si(111) HEMTs with Step-Graded AlGaN Buffer Layer and AlGaN Back Barrier

Kim

2024

Coatings

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Recently, crack-free GaN-on-Si growth technology has become increasingly important due to the high demand for power semiconductor devices with high performances. In this paper, we have experimentally optimized the buffer structures such as the AlN nucleation layer and step-graded AlGaN layer for AlGaN/GaN HEMTs on Si (111) substrate by varying growth conditions and thickness, which is very crucial for achieving crack-free GaN-on-Si epitaxial growth. Moreover, an AlGaN back barrier was inserted to reduce the buffer trapping effects, resulting in the enhancement of carrier confinement and suppression of current dispersion. Firstly, the AlN nucleation layer was optimized with a thickness of 285 nm, providing the smoothest surface confirmed by SEM image. On the AlN nucleation layer, four step-graded AlGaN layers were sequentially grown by increasing the Al composition from undermost layer to uppermost layer, meaning that the undermost one was close to AlN, and the uppermost was close to GaN, to reduce the stress and strain in the epitaxial layer gradually. It was also verified that the thicker step-graded AlGaN buffer layer is suitable for better crystalline quality and surface morphology and lower buffer leakage current, as expected. On these optimized buffer structures, the AlGaN back barrier was introduced, and the effects of the back barrier were clearly observed in the device characteristics of the AlGaN/GaN HEMTs on Si (111) substrate such as the transfer characteristics, output characteristics and pulsed I-V characteristics.

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“…Gallium nitride (GaN) and its related wide-band gap compound semiconductors have been considered candidates for the next generation of RF and power conversion applications [ 1 , 2 , 3 , 4 , 5 ]. Compared with Si, high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures have excellent performance due to their inherent high breakdown strength, low on-resistance, and high temperature operating capability [ 6 , 7 ].…”

Section: Introductionmentioning

confidence: 99%

Improving Performance of Al2O3/AlN/GaN MIS HEMTs via In Situ N2 Plasma Annealing

et al. 2023

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A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al2O3/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasma-enhanced atomic layer deposition (PEALD) and in situ N2 plasma annealing (NPA). Compared with the traditional RTA method, the NPA process not only avoids the device damage caused by high temperatures but also obtains a high-quality AlN monocrystalline film that avoids natural oxidation by in situ growth. As a contrast with the conventional PELAD amorphous AlN, C-V results indicated a significantly lower interface density of states (Dit) in a MIS C-V characterization, which could be attributed to the polarization effect induced by the AlN crystal from the X-ray Diffraction (XRD) and Transmission Electron Microscope (TEM) characterizations. The proposed method could reduce the subthreshold swing, and the Al2O3/AlN/GaN MIS-HEMTs were significantly enhanced with ~38% lower on-resistance at Vg = 10 V. What is more, in situ NPA provides a more stable threshold voltage (Vth) after a long gate stress time, and ΔVth is inhibited by about 40 mV under Vg,stress = 10 V for 1000 s, showing great potential for improving Al2O3/AlN/GaN MIS-HEMT gate reliability.

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Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs

Cited by 29 publications

References 26 publications

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Optimization of Epitaxial Structures on GaN-on-Si(111) HEMTs with Step-Graded AlGaN Buffer Layer and AlGaN Back Barrier

Improving Performance of Al2O3/AlN/GaN MIS HEMTs via In Situ N2 Plasma Annealing

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