Recovery of Alumina Nanocapacitors after High Voltage Breakdown

Abstract

Breakdown of a dielectric material at high electric fields significantly limits the applicability of metal-dielectric-metal capacitors for energy storage applications. Here we demonstrate that the insulating properties of atomic-layer-deposited Al2O3 thin films in Al/Al2O3/Al trilayers can recover after the breakdown. The recovery has been observed in samples with the dielectric thickness spanning from 4 to 9 nm. This phenomenon holds promise for a new generation of capacitors capable of restoring their properties after the dielectric breakdown. Also, if employed in capacitor banks, the recovery process will ensure that the bank remains operational even if a breakdown occurs.

Giant Conductivity Modulation of Aluminum Oxide Using Focused Ion Beam

“…Correspondence: hmohseni@northwestern.edu Aluminum oxide (Al 2 O 3 ) is one of the most widely employed dielectric materials, thanks to its excellent insulating properties 1 , mechanical hardness and resistance 2 , and biocompatibility 2,3 , with applications ranging from device passivation 1,[4][5][6][7][8] , MOSFET gate [9][10][11][12][13] , to biomedical implants and antifouling passivation 2,3,14,15 . Electrical functionalization of Al 2 O 3 via reliable and spatially-accurate control of its conductivity could enable novel sensing technologies encompassing electrical contacts embedded in a mechanically hard, chemically inert, and electrically insulating dielectric matrix.…”

“…Electrical functionalization of Al 2 O 3 via reliable and spatially-accurate control of its conductivity could enable novel sensing technologies encompassing electrical contacts embedded in a mechanically hard, chemically inert, and electrically insulating dielectric matrix. Examples of such technological applications include photon emission and detection 7,[16][17][18][19] , low-energy in-terconnects [20][21][22] , energy conversion 1,23,24 , and implantable devices [25][26][27] . We here present an effective method for the non-subtractive nanopatterning of electrically conductive wires and other features embedded in a dielectric Al 2 O 3 substrate, using focused ion beam (FIB).…”

“…Aluminum oxide (Al 2 O 3 ) is one of the most widely employed dielectric materials, thanks to its excellent insulating properties, mechanical hardness and resistance, and biocompatibility, , with applications ranging from device passivation ,− to MOSFET gate − as well as biomedical implants and antifouling passivation. ,,, Electrical functionalization of Al 2 O 3 via reliable and spatially accurate control of its conductivity could enable novel sensing technologies encompassing electrical contacts embedded in a mechanically hard, chemically inert, and electrically insulating dielectric matrix. In particular, as transparent conducting nanowires have attracted increasing attention for a wide range of applications in optoelectronics, − there is great interest and technological potential for novel techniques for creating conducting nanowires in a widely employed transparent dielectric such as Al 2 O 3 .…”

“…In particular, as transparent conducting nanowires have attracted increasing attention for a wide range of applications in optoelectronics, − there is great interest and technological potential for novel techniques for creating conducting nanowires in a widely employed transparent dielectric such as Al 2 O 3 . Examples of such technological applications include photon emission and detection, ,− low-energy interconnects, − energy conversion, ,, and implantable devices. − …”

Synthesis of an Aluminum Oxide-Based Functional Device Engineered by Corrosion/Oxidation Process

“…However, to manufacture aluminum-based functional devices, it must be gradually oxidized as a function of its ionizing activity where initially a free aluminum atom has a radii of 1.43 Å, but when it is oxidized their three outermost electrons participate in the chemical compounds, which are removed, then the radii of aluminum shrinks to 0.53 Å to be a six-coordinated atom [9]. Further, owing to its low heat retention, relatively high thermal conductivity (30 Wm −1 K −1 ), and large band gap (~4.2 eV), the extended use of aluminum oxide in electronics is currently used in electrically insulated substrates for the integrated circuits, as a tunnel barrier for the fabrication of nanoscale transistors, and as dielectric in insulating barriers of capacitors [10].…”