Recovery of Process-induced Damages of Porous Silica Low- k Films by TMCTS Vapor Annealing

Oku, Y.; Fujii, Nobutaka; Seino, Yutaka; Takasu, Y.; Takahashi, Hideki; Sonoda, Y.; Goto, Tatsuya; Miyoshi, Hidenori; Takada, S.; Kikkawa, Takamaro

doi:10.7567/ssdm.2004.b-2-4

Cited by 2 publications

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“…6,7) A promising method for alternative recovery from plasma-induced damage in porous silica low-k films is organosiloxane vapor postannealing. [8][9][10] In this report, the effects of 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) vapor annealing on chemical bonds and carbon concentration profiles in porous silica films depending on the process gas chemistry are analyzed. The degradation of low-k films was evaluated in terms of the increases in k-values and leakage current.…”

Section: Introductionmentioning

confidence: 99%

Recovery from Plasma-Process-Induced Damage in Porous Silica Low-k Films by Organosiloxane Vapor Annealing

Ono

Kinoshita

Takahashi

et al. 2006

jjap

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It was demonstrated that recovery from dry etching and ashing damage in porous silica low-k films occurred by 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) vapor annealing. The increase in k-value after Ar/C5F8/O2 plasma etching was reduced from 35 to 6.5% of the initial value (k=2.25) by TMCTS vapor annealing. Leakage current also returned to the initial level. Hydrofluoric acid wet etching revealed the sidewall damaged region in a porous silica trench due to plasma processes. The TMCTS vapor annealing was found to be effective for recovery from the sidewall damage. Fourier transformed infrared absorption spectroscopy indicated that the replacement of Si–CH3 bonds in low-k films by Si–O and Si–OH bonds occurred during plasma processes. The recovery mechanism involves hydrophobic bond (–CH3) reintroduction into the film followed by stable cross-linked poly(TMCTS) network formation on pore wall surfaces by TMCTS vapor annealing.

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Section: Introductionmentioning

confidence: 99%

Recovery from Plasma-Process-Induced Damage in Porous Silica Low-k Films by Organosiloxane Vapor Annealing

Ono

Kinoshita

Takahashi

et al. 2006

jjap

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“…1) In addition, a damage recovery method was proposed to restore both the hydrophobicity of the film and leakage current. 2,3) For process optimization, it is important to determine the effect of pore introduction and material composition on etching characteristics, such as etch rate and selectivity. The etch rate of SiOCH was studied and a low hydrogen/carbon (H/C) ratio resulted in etch stop phenomena.…”

Section: Introductionmentioning

confidence: 99%

Plasma Etch Rates of Porous Silica Low-k Films with Different Dielectric Constants

Ono¹,

Takahashi²,

Kinoshita³

et al. 2006

Jpn. J. Appl. Phys.

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The reactive ion etch rates of porous silica films with different dielectric constants (k-values) or film densities were measured by varying wafer bias and gas ratio for Ar/C5F8/O2 plasma. Both the etch rates of porous silica films and the optical emission intensities from the etching products (SiF) increased with wafer bias power. Etch rate increased with decreasing k-value of porous silica, whereas SiF emission intensity was maintained constant regardless of k-value, indicating that the amount of etching products escaping from the porous silica surface to the gas phase remained unchanged. From this result it is concluded that mass etch rate, defined as the weight of a porous silica film etched from a unit area per unit time, is constant for Ar/C5F8/O2 plasma.

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Recovery of Process-induced Damages of Porous Silica Low- k Films by TMCTS Vapor Annealing

Cited by 2 publications

References 0 publications

Recovery from Plasma-Process-Induced Damage in Porous Silica Low-k Films by Organosiloxane Vapor Annealing

Recovery from Plasma-Process-Induced Damage in Porous Silica Low-k Films by Organosiloxane Vapor Annealing

Plasma Etch Rates of Porous Silica Low-k Films with Different Dielectric Constants

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