Recrystallisation temperature of tungsten as a function of the heating ramp

Denissen, C.J.M.; Liebe, J.; Rijswick, Marleen van

doi:10.1016/j.ijrmhm.2005.10.012

Cited by 14 publications

(2 citation statements)

References 2 publications

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“…For instance, Figure 10 shows the log-plot of two characteristic features of the cracking phenomenon: the inverse of the time necessary to reach the 50% of the cracking density (t 50% ) as a function of the inverse of the sample temperature at time t 50% , denoted as T 50% . These two parameters have been successfully applied for the study of the recrystallization temperature of tungsten as a function of the heating rate and allow to get rid of the time dependency of the test [38]. Linear fit to the log-plot yields an E a of 1.05 eV.…”

Section: à2mentioning

confidence: 99%

Characterization of the ion-amorphization process and thermal annealing effects on third generation SiC fibers and 6H-SiC

Huguet-Garcia

Jankowiak

Miro

et al. 2015

EPJ Nuclear Sci. Technol.

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Abstract. The objective of the present work is to study the irradiation effects on third generation SiC fibers which fulfill the minimum requisites for nuclear applications, i.e. Hi-Nicalon type S, hereafter HNS, and Tyranno SA3, hereafter TSA3. With this purpose, these fibers have been ion-irradiated with 4 MeV Au ions at room temperature and increasing fluences. Irradiation effects have been characterized in terms of micro-Raman Spectroscopy and Transmission Electron Microscopy and compared to the response of the as-irradiated model material, i.e. 6H-SiC single crystals. It is reported that ion-irradiation induces amorphization in SiC fibers. Ionamorphization kinetics between these fibers and 6H-SiC single crystals are similar despite their different microstructures and polytypes with a critical amorphization dose of ∼3 Â 10 14 cm À2 (∼0.6 dpa) at room temperature. Also, thermally annealing-induced cracking is studied via in situ Environmental Scanning Electron Microscopy. The temperatures at which the first cracks appear as well as the crack density growth rate increase with increasing heating rates. The activation energy of the cracking process yields 1.05 eV in agreement with recrystallization activation energies of ion-amorphized samples.

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Section: à2mentioning

confidence: 99%

Characterization of the ion-amorphization process and thermal annealing effects on third generation SiC fibers and 6H-SiC

Huguet-Garcia

Jankowiak

Miro

et al. 2015

EPJ Nuclear Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The combination of a high temperature and a high level of displacement damage will induce recovery and grain growth [9][10][11][12][13]. Moreover, recrystallization may take place, since tungsten with a high dislocation density is known to recrystallize under high temperature annealing [14][15][16]. Grain growth can be both thermally-induced [17] or irradiation-induced [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%