Recrystallization and Reactivation of Dopant Atoms in Ion-Implanted Silicon Nanowires

Fukata, Naoki; Takiguchi, Ryo; Ishida, Shinya; Yokono, Shigeki; Hishita, Shunichi; Murakami, Kouichi

doi:10.1021/nn300189z

Cited by 24 publications

(32 citation statements)

References 33 publications

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“…16,21 There has been an extensive body of research investigating the recrystallization of bulk Ge and some progress in recent years on Si and Ge nanostructure recrystallization post ion irradiation. 16,[21][22][23][24][25][26] The high surface-area to volume ratio in nanostructures results in a greater sensitivity to surface roughness and possible surface over-layers during crystal recovery. 27,28 Nanowires possess high surface area to volume ratios, therefore dangling bonds, and by extension stacking faults, are prevalent.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Post-Implant Recrystallization in Germanium Nanowires

Kelly

Liedke

Baldauf

et al. 2015

Crystal Growth & Design

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Section: Introductionmentioning

confidence: 99%

Epitaxial Post-Implant Recrystallization in Germanium Nanowires

Kelly

Liedke

Baldauf

et al. 2015

Crystal Growth & Design

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“…6 With the aim to achieve enhanced control over the dopant levels and their uniform distribution, ion implantation has been applied to introduce dopants in Si and Ge nanowires. [7][8][9][10] In particular, Ge is a potential material for logic and optoelectronic devices due to its high hole and electron mobilities. 11,12 Nonetheless, the processing of bulk and particularly nanostructured Ge, including ion implantation and subsequent crystal recovery, is still poorly understood.…”

Section: Introductionmentioning

confidence: 99%

Visualising discrete structural transformations in germanium nanowires during ion beam irradiation and subsequent annealing

2014

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In this article we detail the application of electron microscopy to visualise discrete structural transitions incurring in single crystalline Ge nanowires upon Ga-ion irradiation and subsequent thermal annealing. Sequences of images for nanowires of varying diameters subjected to an incremental increase of the Ga-ion dose were obtained. Intricate transformations dictated by a nanowire's geometry indicate unusual distribution of the cascade recoils in the nanowire volume, in comparison to planar substrates. Following irradiation, the same nanowires were annealed in the TEM and corresponding crystal recovery followed in situ. Visualising the recrystallisation process, we establish that full recovery of defect-free nanowires is difficult to obtain due to defect nucleation and growth. Our findings will have large implications in designing ion beam doping of Ge nanowires for electronic devices but also for other devices that use single crystalline nanostructured Ge materials such as thin membranes, nanoparticles and nanorods

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“…This results in an electrical activation efficiency of Se dopants of ≈30%, which is comparable with Se‐hyperdoped bulk Si fabricated through the ion implantation followed by FLA . Indeed, the measured carrier concentration in Se‐hyperdoped Si/SiO 2 core/shell NWs is three orders of magnitude greater than that of P‐doped Si NWs developed by ion implantation at an identical fluence of phosphorous (1 × 10 16 P cm −2 ) . The electrically inactive Se atoms are likely due to the formation of clusters and/or interstitials…”

Section: Resultsmentioning

confidence: 64%

CMOS‐Compatible Controlled Hyperdoping of Silicon Nanowires

Berencén

Prucnal

Möller

et al. 2018

Adv Materials Inter

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Hyperdoping consists of the intentional introduction of deep‐level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and the conduction bands. Recently, bulk Si hyperdoped with chalcogens or transition metals is demonstrated to be an appropriate intermediate‐band material for Si‐based short‐wavelength infrared photodetectors. Intermediate‐band nanowires can potentially be used instead of bulk materials to overcome the Shockley–Queisser limit and to improve efficiency in solar cells, but fundamental scientific questions in hyperdoping Si nanowires require experimental verification. The development of a method for obtaining controlled hyperdoping levels at the nanoscale concomitant with the electrical activation of dopants is, therefore, vital to understanding these issues. Here, this paper shows a complementary metal‐oxide‐semiconductor (CMOS)‐compatible technique based on nonequilibrium processing for the controlled doping of Si at the nanoscale with dopant concentrations several orders of magnitude greater than the equilibrium solid solubility. Through the nanoscale spatially controlled implantation of dopants, and a bottom‐up template‐assisted solid phase recrystallization of the nanowires with the use of millisecond‐flash lamp annealing, Se‐hyperdoped Si/SiO2 core/shell nanowires are formed that have a room‐temperature sub‐bandgap optoelectronic photoresponse when configured as a photoconductor device.

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Recrystallization and Reactivation of Dopant Atoms in Ion-Implanted Silicon Nanowires

Cited by 24 publications

References 33 publications

Epitaxial Post-Implant Recrystallization in Germanium Nanowires

Epitaxial Post-Implant Recrystallization in Germanium Nanowires

Visualising discrete structural transformations in germanium nanowires during ion beam irradiation and subsequent annealing

CMOS‐Compatible Controlled Hyperdoping of Silicon Nanowires

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