Recrystallization behavior of high-fluence N+-implanted GaAs studied by Raman spectroscopy

High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs

“…For the just PLM processed sample, a slight red shift of the LO-mode from 292 cm − 1 to 290 cm − 1 is observed. This shift is induced by lattice strains attributed to the laser melting process [41][42][43][44][45]. It can also be observed a narrowing of the LO-mode, which is characteristic of the phonon scattering in a defect-free crystalline GaAs [40].…”

Damage Assessment in Low Doses30Si+-Implanted GaAs

“…We have interpreted it as a scattering from those parts of the implanted layer which were re-crystallized, and misoriented after freezing out of the hot tracks along the ions' path. A broad band at 250 cm −1 , which is characteristic for the continuous-random-network structure of the amorphous phase (a-CRN) [7], is present only in the 1×10 13 and 3×10 13 ions /cm 2 implanted samples. Thus, only at those doses the amorphous fraction contributes, albeit slightly, to the RS signal.…”

“…For a quantitative disorder assessment, the average size of the undamaged crystalline regions, L RS , over which order and translational symmetry is preserved, could be determined from the analysis of the LO phonon peak. The LO peak was analyzed within the "spatial correlation" model [11][12][13] in which it is assumed that defects introduced by irradiation partition the crystal into regions of a finite size L. Due to the loss of a long range order, the symmetry conservation rule spans only a certain range of wave numbers of the order of 1/L, where L is the correlation (localization) length, i.e. an average size of the undamaged region.…”