Recrystallization behavior, oxygen vacancy and photoluminescence performance of sputter-deposited Ga2O3 films via high-vacuum in situ annealing

Wang, Haiyan; Tang, Chunmei; Yang, Weijia; Zhao, Jing; Liu, Lihua; Mu, Jianxun; Zhang, Yupeng; Zeng, Caiyou

doi:10.1016/j.ceramint.2021.10.126

Cited by 22 publications

(5 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Haiyan Wang et al demonstrated via XPS and photoluminescence analysis that the increase in annealing temperature (from 600 to 900 • C) provides a great force for O atoms to diffuse into ZnO thin films. This reduces the number of oxygen vacancies/defects and defects of Zn [37]. The enhancement in crystallinity can be corroborated with the diminution in δ values.…”

Section: X-ray Diffraction (Xrd)mentioning

confidence: 58%

ZnO Deposition on Silicon and Porous Silicon Substrate via Radio Frequency Magnetron Sputtering

Morales-Morales,

Martínez-Ayala,

Jiménez-Vivanco

et al. 2023

Coatings

View full text Add to dashboard Cite

Nanostructured Zinc Oxide (ZnO) was deposited on silicon (c-Si) and macroporous silicon (m-PS) using a radio frequency (RF) reactive magnetron sputtering technique. Two RF powers of 60 and 80 W were selected for ZnO deposition on the substrates. Furthermore, the c-Si and m-PS substrate temperatures were kept at 500 and 800 °C, respectively. The morphological, structural, and optical characteristics of the samples were studied using scanning electron microscopy (SEM), an X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), and photoluminescence spectroscopy (PL). The SEM images revealed the formation of ZnO nanorods on the c-Si and ZnO nanostructures constituted by the assembly of nanorods. It has been found that the increasing RF sputtering power caused the rise in the residual stress. In addition, the increase in the deposition temperature caused an improvement in the arrangement of the crystals, which was attributed to the decrease in crystal defects.

show abstract

Section: X-ray Diffraction (Xrd)mentioning

confidence: 58%

ZnO Deposition on Silicon and Porous Silicon Substrate via Radio Frequency Magnetron Sputtering

Morales-Morales,

Martínez-Ayala,

Jiménez-Vivanco

et al. 2023

Coatings

View full text Add to dashboard Cite

show abstract

“…In addition, as depicted in Figure 3 e, the root-mean-square (RMS) roughness of the surface increased from 0.22 nm to 0.68 nm as the annealing temperature increased from 25 °C to 800 °C, respectively. The increase in the size of surface grains and surface roughness of Ga 2 O 3 thin films during this high-temperature annealing process can be attributed to the vibration and movement of atoms induced by the high-temperature recrystallization of the Ga 2 O 3 structure [ 38 ]. The post-nucleation growth of the island structure was attributed to the low surface mobility of atoms adsorbed during the sputtering process.…”

Section: Resultsmentioning

confidence: 99%

Improvements in Resistive and Capacitive Switching Behaviors in Ga2O3 Memristors via High-Temperature Annealing Process

Lee,

Kim,

Kim

et al. 2024

Materials

View full text Add to dashboard Cite

This study investigates the effect of a high-temperature annealing process on the characteristics and performance of a memristor based on a Ag/Ga2O3/Pt structure. Through X-ray diffraction analysis, successful phase conversion from amorphous Ga2O3 to β-Ga2O3 is confirmed, attributed to an increase in grain size and recrystallization induced by annealing. X-ray photoelectron spectroscopy analysis revealed a higher oxygen vacancy in annealed Ga2O3 thin films, which is crucial for conductive filament formation and charge transport in memristors. Films with abundant oxygen vacancies exhibit decreased set voltages and increased capacitance in a low-resistive state, enabling easy capacitance control depending on channel presence. In addition, an excellent memory device with a high on/off ratio can be implemented due to the reduction of leakage current due to recrystallization. Therefore, it is possible to manufacture a thin film suitable for a memristor by increasing the oxygen vacancy in the Ga2O3 film while improving the overall crystallinity through the annealing process. This study highlights the significance of annealing in modulating capacitance and high-resistive/low-resistive state properties of Ga2O3 memristors, contributing to optimizing device design and performance. This study underscores the significance of high-temperature annealing in improving the channel-switching characteristics of Ga2O3-based memristors, which is crucial for the development of low-power, high-efficiency memory device.

show abstract

“…Singh等 [22] 解释了在空气中高温退火导致空气中的C掺杂, 尤其是在1000 ℃ 以上时, 空气中的C 元素促进更多高质量的单斜Ga 2 O 3 形成等. 在探测器性能方面, Yu等 [23] 开始变差, 结合Feng等 [20] 和Tien等 [21] 关于退火气氛的探究工作, 推测是由两个机理的共同作用: I n P r e s s 在进行高温退火后会使得薄膜的结晶质量提升 [25] .…”

Section: 报道了退火温度对Pld法制备氧化镓的微观结构影响退火温度的升高会带来蓝宝石基底的Al扩unclassified

Effects of annealing temperature on properties of gallium oxide thin films and ultraviolet detectors

Juxin¹,

Gao²,

Deng³

et al. 2023

Acta Phys. Sin.

View full text Add to dashboard Cite

In this work, Gallium oxide (Ga2O3) thin films are deposited by radio frequency magnetron sputtering on quartz substrates at room temperature and control different annealing temperatures in argon atmosphere for the post-annealing process. The influence of annealing temperatures in the argon atmosphere on crystal structure, transmittance, surface morphology, and optical band gap of the samples are investigated in detail. It is found that the annealing process can improve the crystalline quality of the film, but high-temperature annealing can also easily cause oxygen elements in the film to escape from the film to form oxygen vacancies, and it is evidenced by XPS test results images. To obtain the effect of the annealing process on the performance of gallium oxide thin film detectors, the MSM photodetector based on the samples annealed at 800 °C, which is compared with untreated samples operated at a reverse bias voltage of 1.1V can achieve excellent comprehensive photo-detection properties for 254 nm ultraviolet light: The light-dark current ratio(I254/Idark), responsivity and specific detectivity are high as 1021.3, 0.106 A/W and 1.61×1012Jones, respectively, which are 7.5, 195 and 38.3 times that of the unannealed sample device. And the external quantum efficiency is improved by 51.6 %. The rise time of the 800 °C annealed sample detector (0.19/0.48 s) is reduced compared to the unannealed sample (0.93/0.93s), and the descent time of 800 ℃ detector（0.64/0.72 s） is increased compared to the unannealed sample（0.45/0.49 s）, respectively. By comparing the parameters with other current gallium oxide-based MSM photodetectors, It is found that the detector parameters of this work have some gaps compared with the current optimal parameters, which is attributed to the fact that the quartz substrate is selected for this work and not the sapphire substrate that is more matching with gallium oxide, resulting in the poor quality of the film compared with the sample on the sapphire substrate, and in this work, the photodetector have the high light-dark current ratio (PDCR) and detection rate (D*). In the end, the mechanism of increasing oxygen vacancies after annealing leading to improvement of detector performance parameters is analyzed in detail.

show abstract

Recrystallization behavior, oxygen vacancy and photoluminescence performance of sputter-deposited Ga2O3 films via high-vacuum in situ annealing

Cited by 22 publications

References 46 publications

ZnO Deposition on Silicon and Porous Silicon Substrate via Radio Frequency Magnetron Sputtering

ZnO Deposition on Silicon and Porous Silicon Substrate via Radio Frequency Magnetron Sputtering

Improvements in Resistive and Capacitive Switching Behaviors in Ga2O3 Memristors via High-Temperature Annealing Process

Effects of annealing temperature on properties of gallium oxide thin films and ultraviolet detectors

Contact Info

Product

Resources

About