Recrystallization upon solvent vapor annealing and impact of polymer crystallinity on hole transport in poly(3-hexylthiophene):small molecule blends

Chlebosz, Dorota; Janus, Krzysztof; Danielewicz, Kinga; Goldeman, Waldemar; Czapik, Agnieszka; Glaßer, Gunnar; Mezger, Markus; Kiersnowski, Adam

doi:10.1039/d0me00092b

Cited by 4 publications

(10 citation statements)

References 27 publications

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“…Previously we have demonstrated that adding small quantities of NDIs in P3HT can enhance hole transport in the P3HT:NDI blends (Chlebosz et al, 2020). The goal in this study was to test the hypothesis if doping of NDIC8 with small quantities of p-type polymer (P3HT) can enhance electron transport in the way analogical as observed for p-type P3HT-based systems (Chlebosz et al, 2020).…”

Section: Introductionmentioning

confidence: 93%

“…The motivation to study the blend of the core-unsubstituted NDIC8 doped with P3HT was, however, to further explore a potential of alkylated NDIs as n-type semiconductors in hybrid systems, as indicated in our previous works (Janasz et al, 2018). Previously we have demonstrated that adding small quantities of NDIs in P3HT can enhance hole transport in the P3HT:NDI blends (Chlebosz et al, 2020). The goal in this study was to test the hypothesis if doping of NDIC8 with small quantities of p-type polymer (P3HT) can enhance electron transport in the way analogical as observed for p-type P3HT-based systems (Chlebosz et al, 2020).…”

Section: Introductionmentioning

confidence: 99%

“…Either heterogeneous nucleation or epitaxial growth may cause formation of metastable film morphologies that can be kinetically equilibrated by thermal or solvent vapor annealing (Chlebosz et al, 2020;Mori et al, 2020). Both kinds of annealing cause profound changes in film morphology (Schulz and Ludwigs 2017;Chlebosz et al, 2020;Fidyk et al, 2020). Solvent vapor annealing is process substantially longer than the film deposition.…”

Section: Introductionmentioning

confidence: 99%

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Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene)

et al. 2021

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Herein we report on fabrication and properties of organic field-effect transistors (OFETs) based on the spray-coated films of N,N′-dioctyl naphthalene diimide (NDIC8) doped with 2.4 wt% of poly (3-hexylthiophene) (P3HT). OFETs with the untreated NDIC8:P3HT films revealed electron conductivity [μe* = 5 × 10–4 cm2×(Vs)−1]. After the annealing in chloroform vapor the NDIC8:P3HT films revealed the hole transport only [μh* = 0.9 × 10–4 cm2×(Vs)−1]. Due to the chemical nature and energy levels, the hole transport was not expected for NDIC8-based system. Polarized optical- and scanning electron microscopies indicated that the solvent vapor annealing of the NDIC8:P3HT films caused a transition of their fine-grained morphology to the network of branched, dendritic crystallites. Grazing incidence wide-angle X-ray scattering studies indicated that the above transition was accompanied by a change in the crystal structure of NDIC8. The isotropic crystal structure of NDIC8 in the untreated film was identical to the known crystal structure of the bulk NDIC8. After the solvent annealing the crystal structure of NDIC8 changed to a not-yet-reported polymorph, that, unlike in the untreated film, was partially oriented with respect to the OFET substrate.

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Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene)

et al. 2021

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“…32 The explanation of this problem lies in understanding the interplay between local aggregation, global crystallinity, crystal sizes, and fragmentation and formation of conduction pathways in the ultrathin active films of the electronic devices. 7,10,32 Based on the above motivation, we aimed our study at correlating phase composition with charge transport in the ultrathin films of poly(3-hexylthiophene-co-thiophene) (P3HTT) films. Quantitative studies on the correlation between phase composition and charge carrier transport are relatively rare.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Over the past decade, a variety of strategies to improve the hole mobility of P3HT have been proposed. The improvements were achieved, amongst others, by increasing the crystallinity of P3HT via specific processing or postprocessing protocols . One of the simplest and the most frequently reported strategies to enhance the charge carrier transport in P3HT relies on polymer solution aging prior to film casting. − P3HT macromolecules form so-called aggregates during the solution aging.…”

Section: Introductionmentioning

confidence: 99%

Contributions of Polymer Chain Length, Aggregation and Crystallinity Degrees in a Model of Charge Carrier Transport in Ultrathin Polymer Films

et al. 2023

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Herein we report a systematic study on the quantitative relationships between molecular structure, crystallinity, aggregation, and charge carrier transport in films of poly(3-hexylthiophene-co-thiophenes) (P3HTTs) with thickness ranging from 5.7 to 8.0 nm. The P3HTTs contained 10, 20, or 30 mol % of thiophene monomer units. Our UV–Vis, X-ray diffraction, and atomic force microscopy (AFM) studies indicated that the variable thiophene content in the P3HTTs as well as the solution aging prior to film casting permitted a control over aggregation density (X a), crystallinity degree (X c), crystal fragmentation, and overall film morphology. Increasing the thiophene content in P3HTT caused a linear increase in the X a and a linear drop in the X c as well as crystal sizes. Aging the solution prior to casting resulted in a change of film morphology from granular to fibrillar and a noticeable increase in both X a and X c. The hole mobility determined from field-effect transistor characteristics grew nonlinearly with increasing thiophene content in P3HTT and was boosted by the aggregation-induced increase in X a or X c. For the 7.5 nm-thin P3HTT film (30 mol % of thiophene), the μh was as high as 0.017 cm2 × V–1 × s–1. In order to explain the observed μh variation, we have employed a model of charge transport through a series circuit, where crystals, aggregates, and the amorphous phase were considered units with different resistance to charge carrier transport. A systematic analysis of the experimental dataset revealed a quantitative correlation of the μh with the polymer end-to-end distance, interaggregate distance, and crystallinity index. Also, the correlation expressed with a single equation derived in this work enabled estimation of the minimum mobility of the amorphous phase and maximum mobility of the crystal phase in the quasi-two-dimensional films. Our original findings suggest that in quantitative considerations of charge transport in the ultrathin polymer films, the morphology should be considered secondary to molar mass and phase composition.

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Optimizing the solvent and blend morphology results in an additive-free organic photovoltaic achieving 17.8% efficiency

Chen

Liu

Peng

et al. 2022

Materials Chemistry and Physics

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Recrystallization upon solvent vapor annealing and impact of polymer crystallinity on hole transport in poly(3-hexylthiophene):small molecule blends

Cited by 4 publications

References 27 publications

Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene)

Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene)

Contributions of Polymer Chain Length, Aggregation and Crystallinity Degrees in a Model of Charge Carrier Transport in Ultrathin Polymer Films

Optimizing the solvent and blend morphology results in an additive-free organic photovoltaic achieving 17.8% efficiency

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