Rectification Characteristics of C₆₀-doped 4-(2,2-diphenylethenyl)-<i>N</i>,<i>N</i>-bis(4-methylphenyl)-benzenamine Dual-layer Device

Abstract

To achieve an efficient hole injection into triphenylamine derivatives cast on an Au electrode, we focused on the use of Fullerene (C 60 )doped triphenylamine derivative as a buffer layer. After measuring the current-voltage properties of a layered device with the Au/C 60doped triphenylamine derivative/triphenylamine derivative/Au, hole injection was improved only at the interface where C 60 was introduced. In addition, when 1 mol% of C 60 was doped, the energy barrier for the hole injection decreased to 0.06 eV from 0.43 eV. Overall, we successfully developed a device with enhanced rectification properties.