Rectifying and breakdown voltage enhancement of Au/n-GaN Schottky diode with Al-doped ZnO films and its structural characterization

Janardhanam, V.; Jyothi, I.; Lee, Sung‐Nam; Reddy, V. Rajagopal; Choi, Chel‐Jong

doi:10.1016/j.tsf.2019.03.007

Cited by 25 publications

(3 citation statements)

References 46 publications

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“…[ 28 ] The wide distribution of

\emptyset_{normalB}

and IF is caused by the rough surface of the p ‐layer or nonuniformity between the O ‐terminated surface and Schottky metal, which may also be due to other transport mechanisms and non‐uniform interfacial charge. [ 29 ] Additionally, when NC or hillock exists in the Schottky region of the drift layer,

\emptyset_{normalB}^{low}

patch that lowers the barrier height occurs which seems to make a difference. Figure shows the characteristics of C–V and

C^{2}

‐ V of the MS and MIS SBDs for each Schottky area, measured at 300 K and 1 MHz.…”

Section: Resultsmentioning

confidence: 99%

Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate

Han¹,

Kwak²,

Choi³

et al. 2023

Physica Status Solidi (a)

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Herein, the growth of lateral‐structure p‐type diamond Schottky barrier diodes (SBDs) on a heteroepitaxial diamond substrate using a thin atomic‐layer‐deposited hafnium oxide () interfacial layer is demonstrated. The diamond SBD is grown using the microwave plasma chemical vapor deposition (MPCVD) with 1 kW microwave power at 2.45 GHz. Two kinds of samples are grown on heteroepitaxial diamond substrates under the same growth conditions for identical epi structures. And the 10 nm thickness of is used as an insulator for MIS SBD. The effects of the interlayer on the electrical properties of the SBDs are investigated using current–voltage (I–V curve) and capacitance–voltage (C–V curve) characteristics at room temperature. Compared with the metal–semiconductor (MS) SBD, the metal–insulator–semiconductor (MIS) SBD exhibited a lower reverse leakage current. The Schottky barrier height in the MIS SBD is almost 0.2 eV higher than in the MS SBD. The insertion of the interlayer reduces the inhomogeneous Schottky barrier height and enhances the barrier height because of the reduction in the interface state density.

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“…[ 28 ] The wide distribution of

\emptyset_{normalB}

\emptyset_{normalB}^{low}

patch that lowers the barrier height occurs which seems to make a difference. Figure shows the characteristics of C–V and

C^{2}

‐ V of the MS and MIS SBDs for each Schottky area, measured at 300 K and 1 MHz.…”

Section: Resultsmentioning

confidence: 99%

Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate

Han¹,

Kwak²,

Choi³

et al. 2023

Physica Status Solidi (a)

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“…Here, W D and n (V) are the width of the space charge region and voltage-dependent ideality, respectively, where n ( V ) is defined as n ( V ) = qV /( kT ln( I / I 0 )). The energy E SS of the interface states with respect to the bottom edge of the conduction band is given by …”

Section: Results and Discussionmentioning

confidence: 99%

Photovoltaic Photodetectors Based on In₂O₃/InN Core–Shell Nanorods

Reddeppa

Park

Nam

et al. 2022

ACS Appl. Nano Mater.

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Indium nitride (InN)-based nanostructures have attracted substantial interest in the development of next-generation nanostructured optoelectronic devices. By expanding the light absorption range, the concept of heterostructures is of paramount significance in optoelectronics. Herein, we report a self-powered photodetector using In2O3/InN core–shell nanorods (NRs). InN NRs were grown using molecular beam epitaxy, and a radial In2O3/InN core–shell NR heterojunction with an In2O3 polycrystalline sheath layer was fabricated using hydrogen plasma treatment. The temperature-dependent current–voltage characteristics exhibit nonideal behavior, and the interface states cause deviation in barrier heights (BHs). The calculated BHs for InN and In2O3/InN core–shell heterostructure are estimated to be 0.47 and 0.62 eV, respectively. The In2O3/InN core–shell heterostructure achieved the highest photosensitivity and detectivity values of 3.22 A/W and 1.07 × 1011 Jones under λ = 465 nm (0.64 mW/cm2), respectively, in the self-power mode. This figure of merit is retained in 382–465 nm spectral regions. The maximum responsivity noticed at 465 nm is believed to be the intermediate oxygen defect energy levels within the forbidden gap of In2O3. The high performance was also attributed to the passivation of the InN NR surfaces by In2O3. The study would be beneficial for the development of solar-blind photodetectors.

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“…If the interface states are primarily located along the current path, the forward I-V characteristics can provide an estimation of those local interface states. 43,44 Therefore, the higher interface state density for 5-nm-thick ZnO indicates that the contribution of interface states to the current conduction is more significant. Figure 8b shows the C-V hysteresis curves measured at 1 MHz.…”

Section: Pt/zno Interface Could Be One Reason For the High Q/ Bmentioning

confidence: 99%

Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts

Kim

Jung

Choi

et al. 2021

Journal of Elec Materi

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ZnO films (5 nm and 20 nm) have been grown on GaN single-crystal substrates by thermal atomic layer deposition (ALD) and the electrical properties of n-GaN Schottky contacts modified by such ultrathin ZnO films have been characterized. Compared with 5-nm-thick ZnO, 20-nm-thick ZnO exhibited a better rectifying nature. The average barrier height and ideality factor at room temperature were extracted to be 0.64 eV and 2.33 eV, and 1.01 eV and 1.16 eV, for 5-nm-and 20-nm-thick ZnO, respectively. These results indicate that both the barrier height and ideality factor were altered effectively by changing the ZnO thickness. The temperature-dependent reverse currentvoltage (I-V) characteristics revealed that tunneling was dominant for the 5nm-thick ZnO. A laterally inhomogeneous barrier was appropriate to explain the forward I-V characteristics for both samples. Based on the parallel conductance method and forward I-V data, a lower interface state density was observed for 20-nm-thick ZnO, implying improved interface quality. These results suggest that the electrical properties of n-GaN Schottky contacts could be easily modulated by changing the ZnO thickness.

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Rectifying and breakdown voltage enhancement of Au/n-GaN Schottky diode with Al-doped ZnO films and its structural characterization

Cited by 25 publications

References 46 publications

Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate

Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate

Photovoltaic Photodetectors Based on In₂O₃/InN Core–Shell Nanorods

Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts

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Rectifying and breakdown voltage enhancement of Au/n-GaN Schottky diode with Al-doped ZnO films and its structural characterization

Cited by 25 publications

References 46 publications

Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate

Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate

Photovoltaic Photodetectors Based on In2O3/InN Core–Shell Nanorods

Atomic Layer Deposition of ZnO for Modulation of Electrical Properties in n-GaN Schottky Contacts

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Product

Resources

About

Photovoltaic Photodetectors Based on In₂O₃/InN Core–Shell Nanorods