Rectifying characteristics and bipolar resistance switching behaviors in sol–gel processed TiO_x thin film

Abstract

We demonstrate a sol-gel processed Ti/TiO x /Pt device for rectifying characteristics as well as resistive switching. In the rectification mode, Ti/ TiO x /Pt device exhibited a forward current density (>10 2 A/cm 2 ) and on/off ratio (>10 4 ) owing to asymmetric Schottky barrier at the Ti/TiO x (0.11 eV) and TiO x /Pt (0.57 eV). After the forming process by applying the positive bias, the rectification mode of sol-gel TiO x device changed to the resistive switching mode. In the case of resistive switching mode, when applying the negative bias, the high resistance state (HRS) is dominated by Schottky emission in low voltage and by Poole-Frenkel emission in high voltage. Contrary to applying the negative bias, the HRS exhibited the Schottky emission in the whole positive bias. Different type of switching mechanisms might be attributed to the oxygen vacancy distribution across the TiO x active layer.

Modulation of the resistive switching of BiFO3 thin films through electrical stressing

“…Figure 4(a) shows the ln(J/T 2 ) − 1/T plot of the current measured from room temper ature to 324 K. From the slope of fitted linear graph, the Schottky barrier height under different voltage was derived and plotted as a function of the applied voltage. As shown in the inset of figure 4(a), the Schottky barrier height ϕ b under zero bias at the top Au/BFO interface was extracted to be 0.62 eV; this value is consistent with the results from many previous reports [9,26,44,45]. As V Ö with positive charge can attract electrons, they usually act as electron trapping centers and induce the RS effect [21].…”

Resistive switching mechanism of ZnO/ZrO2-stacked resistive random access memory device annealed at 300 °C by sol–gel method with forming-free operation

“…[13][14][15] Transition metal oxides (TMOs) in ZnO are used not only for thin-film transistors 16) and solar cells 17) but also for obtaining superior properties of memory devices. [18][19][20][21] Other binary TMOs, such as ZrO 2 , [22][23][24][25] HfO 2 , 10) TiO 2 , 26,27) WO 3 , 28) Al 2 O 3 , 29) and SiO x , have also received considerable attention. 30) At present, the RS characteristics can be obtained using a variety of deposition techniques, such as radio-frequency (RF) magnetron sputtering, atomic layer deposition, and plasma-oxidized metal deposition.…”

Graphene with different oxygenated levels in transparent resistive switching memory applications

“…[3][4][5][6][7][8][9] Some transition metal oxides, such as ZrO 2 , TiO 2 , and HfO 2 , have been reported for nonvolatile resistive switching memory applications. [10][11][12][13][14][15][16][17][18][19][20][21][22] However, few of them are transparent. In addition, GO with transparent electrodes is a transparent device, which can be used in both new-generation nonvolatile memory and transparent devices.…”