Abstract:Methane and molecular hydrogen desorption from a methyl and hydrogen exposed Cu(001) surface is investigated. Both gaseous products are observed nearly simultaneously within two temperature regimes separated by more than 100 K. The lower temperature desorption, at ∼325 K, is believed to result from two processes which compete for adsorbed atomic hydrogen: methyl reduction and associative hydrogen desorption. The higher-temperature competitive desorption is initiated after the onset of thermal decomposition of … Show more
“…Therefore, this phenomenon also indicates that dehydrogenation is involved in the overall graphene growth process, as confirmed by isotope‐labeling experiments . In addition, desorption of active carbon species from Cu surface is non‐negligible and the gas phase compositions might also influence the nucleation behaviors of graphene …”
Section: Graphene Growth Via Cvdmentioning
confidence: 57%
“…[30] In addition, desorption of active carbon species from Cu surface is non-negligible and the gas phase compositions might also influence the nucleation behaviors of graphene. [36,45,46] The formation energy of carbon clusters on Cu(111) surfaces can be described by Equation (1)…”
“…Therefore, this phenomenon also indicates that dehydrogenation is involved in the overall graphene growth process, as confirmed by isotope‐labeling experiments . In addition, desorption of active carbon species from Cu surface is non‐negligible and the gas phase compositions might also influence the nucleation behaviors of graphene …”
Section: Graphene Growth Via Cvdmentioning
confidence: 57%
“…[30] In addition, desorption of active carbon species from Cu surface is non-negligible and the gas phase compositions might also influence the nucleation behaviors of graphene. [36,45,46] The formation energy of carbon clusters on Cu(111) surfaces can be described by Equation (1)…”
“…C 2 H y Formation Reaction and the Activated Second-order CH x+1 + CH z−1 Reaction. According to the speculations in the previous experimental study, 29 there are two possible reactions between CH x species, that is, C 2 H y formation, reaction 1, and the activated second-order CH x−1 + CH z−1 , reaction 2, as follows:…”
Section: Introdutionmentioning
confidence: 99%
“…Motivated by this idea, a systematic study on the possible reaction mechanism for C 2 H y formation on Cu(100) surface has been conducted in this work by employing the density functional theory (DFT). Meanwhile, the activated second-order CH x +1 + CH z –1 reactions based on the experiment are also considered in this study.…”
Section: Introdutionmentioning
confidence: 99%
“…It is known that the hydrocarbon molecule dissociation, the diffusion of C atoms or clusters on the catalyst surface, the formation of the nucleation graphene islands, and the growth of graphene islands are the main four steps for graphene CVD growth. 22−28 It is obvious that the first dissociation process is the precondition for the graphene growth and the decom- 29 are also considered in this study.…”
The
possible C2H
y
(y = 2–6) formation reactions (CH
x
+ CH
z
→ C2H
y
(y = x + z)) and activated second-order CH
x+1 + CH
z–1 reactions
(CH
x
+ CH
z
→ CH
x+1 + CH
z–1) during CH4 dissociation on Cu(100) surface
have been investigated by using the density functional theory. Our
results show that C2H
y
(y = 2, 4) formation reactions are favorable both kinetically
and thermodynamically, compared with the direct dehydrogenation of
CH4 (CH
x
→ CH
x–1 + H) and second-order CH
x+1 + CH
z–1 reactions. The
second-order CH
x+1 + CH
z–1 reactions are less competitive compared with the
direct dehydrogenation of CH
x
. Both DFT
calculations and microkinetic model demonstrate that the reaction
CH + CH → C2H2 is a major channel to
produce C2H
y
at a temperature
of 860 °C, followed by CH3 + CH → C2H4. When the H2 influence is introduced, the
major intermediate changes from CH to CH3 on Cu(100) surface
with the increase of H2 partial pressure, while the coverage
difference between CH and CH3 is not significant. This
means that both species will have a large influence on the graphene
growth mechanism.
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