Recycling of metal-organic chemical vapor deposition waste of GaN based power device and LED industry by acidic leaching: Process optimization and kinetics study

Swain, Basudev; Mishra, Chinmayee; Kang, Leeseung; Park, Kyung-Soo; Lee, Chan Gi; Hong, Hoon; Park, Jeung-Jin

doi:10.1016/j.jpowsour.2015.01.189

Cited by 37 publications

(16 citation statements)

References 18 publications

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“…The pre-treatment improved Ga leaching from 4.91 wt.% to 73.6 wt.%; however, In is evaporated during the oxidation process. 68,70 The oxidation (1100°C) process before leaching (4 M HCl) was also adopted by Mareefvand et al; however, it involved high temperature, grain growth (reduced surface area affecting leaching), and reduced Ga recovery due to diffusion in Al substrate. 28 Furthermore, In detected in the LED industry waste (due to decomposition of InN at room temperature) could be treated by oxidation as the free energy of In 2 O 3 in the range of 0°C to 1600°C and was negative (feasible).…”

Section: Recycling Of Ledsmentioning

confidence: 99%

A Review on Recycling of End-of-Life Light-Emitting Diodes for Metal Recovery

Mir

Vaishampayan

Dhawan

2022

JOM

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The generation of end-of-life light-emitting diodes (LEDs) requires efforts to minimize waste and recycle critical raw elements (gallium, indium, and rare earths). This review critically analyzes recycling processes such as physical, hydrometallurgical, and pyrometallurgical treatments. An insight into gallium compounds (GaN, GaAs) and their influence on recycling strategies is provided. Pre-treatment plays a critical role in dissociating the rigid structure of GaN. The major gaps in recycling are identification, segregation, selective recovery, and limited studies on the elemental flow of toxic arsenic. It is calculated that the processing of 1 ton of LEDs is equivalent to 7.8 tons, 3.2 tons, and 42 tons of primary Ga ore, In ore, and Au ore in metallurgical value, respectively. The market value calculations revealed significant economic values of Au, Ag, and REEs. A recycling flowsheet based on the literature for the holistic recovery of Ga, In, Au, and REEs is proposed.

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Section: Recycling Of Ledsmentioning

confidence: 99%

A Review on Recycling of End-of-Life Light-Emitting Diodes for Metal Recovery

Mir

Vaishampayan

Dhawan

2022

JOM

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“…This is because NaOH melts at a much lower temperature than LiBO 2 or Na 2 CO 3 , so the NaOH has more opportunity to attack the material. However, the use of HCl after alkali-roasting could not dissolve the GaN waste completely at one time because the residues after filtration must be calcined with the alkaline salts and added to the HCl for several times in order to completely dissolve the GaN waste according to B. Swain [28].…”

Section: Alkaline-roasting Leachingmentioning

confidence: 99%

“…Swain et al [28] has reported using the acidic leaching method to recycle Ga rich metal-organic chemical vapor deposition residues, rich in GaN, InGaN and other Ga-compounds. They have found that other than GaN Ga phases were soluble in HCl, however solubility of GaN showed difficulties in leaching.…”

Section: Introductionmentioning

confidence: 99%

Recycling the GaN Waste from LED Industry by Pressurized Leaching Method

Chen

Hsu

Wang

2018

Metals

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In recent years, with the increasing research and development of the light-emitting diode (LED) industry, which contains gallium nitride (GaN), it is expected that there will be a large amount of related wastes in the future. Gallium has an extremely high economic value, therefore, it is necessary to establish a recycling system for the GaN waste. However, GaN is a direct-gap semiconductor and with its high energy gap, high hardness, and high melting point, these make it difficult to recycle. Therefore, this study will analyze the physical characteristics of LED wastes containing GaN and carry out various leaching methods to leach the valuable metals from the waste optimally. Different acids are used to find out the best reagent for gallium leaching. Different experimental parameters are discussed, such as the effect of the different acid agents, concentration, pressure, liquid-solid mass ratio, temperature and time, which influence the leaching efficiency of gallium. Finally, acid leaching under high pressure is preferred to leach the GaN waste, and hydrochloric acid is used as the leaching solution because of its better leaching efficiency of gallium. Optimally, the leaching efficiency of gallium can reach 98%. by other materials/metals, and triggers global competitions to ensure steady supply [7]. According to a recent report published by the united nations environment program (UNEP), less than 1% of end-of-life (EOL) gallium and indium bearing materials are being recycled [2,3]. Gallium is used in a wide variety of products that have microelectronic components containing either gallium arsenide (GaAs) or gallium nitride (GaN) [5]. Due to the low solubility of nitrogen in gallium and the high vapor pressure of nitrogen on GaN, the native substrate of GaN is not available in large quantities. The GaN is a crystal of high bond energy that is equal to 7.72 eV/molecule, which results in higher melting temperature and good thermal stability [8,9]. The value of sales for the GaN power device market was expected to reach $178 million by 2015 at an annual growth rate of nearly 29 percent [10]. In 2012, imports of gallium and GaAs wafers, which were valued at about $32 million, continued to satisfy almost all U.S. demand for gallium. GaAs and GaN electronic components represented about 99 percent of domestic gallium consumption [5]. The value of worldwide GaAs device consumption increased by about 7% to $7.5 billion in 2015 owing to a growing wireless telecommunications infrastructure in Asia; growth of feature-rich, application-intensive, third-and fourth-generation (3G, 4G) "smartphones", which employ up to 10 times the amount of GaAs as standard cellular handsets; and robust use in military radar and communications applications. Cellular applications accounted for approximately 53% of total GaAs device revenue and wireless communications accounted for 27%. Various automotive, consumer, fiber-optic, and military applications accounted for the remaining revenue [11]. By yearend 2016, the GaN radio frequency device mar...

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“…Swain et al [28] has reported using acidic leaching method to recycle Ga rich metal-organic chemical vapour deposition residues, rich in GaN, InGaN and other Ga-compounds. They have found that other than GaN Ga phases were soluble in HCl, however solubility of GaN showed difficulties in leaching.…”

Section: Introductionmentioning

confidence: 99%

Recycling the Gan Waste from LED Industry by Pressurized Leaching Method

Chen¹,

Hsu

Wang

2018

Preprint

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In recent years, with the increasing research and development of the LED industry which contains GaN, it is expected that there will be a large amount of related wastes in the future. Especially the gallium has extremely high value of economic, therefore, it is necessary to establish the recycling system of the GaN waste. However, GaN is a direct-gap semiconductor and with high energy gap, high hardness, and high melting point make it difficult to recycle. Therefore, this study will analyze the physical characteristics of LED wastes containing GaN and carry out various leaching method to leach the valuable metals from the waste optimally. Different acids are used to find out the best reagent for leaching the gallium. Different experimental parameters are discussed such as the effect of the different acid agents , concentration, pressure, solid-liquid mass ratio, temperature, and time which influence the leaching efficiency of the gallium. In this study, various leaching methods which effect the leaching efficiency of the gallium are compared and the advantages and disadvantages are discussed. Finally, pressurized acid leaching method is preferred to leach the GaN waste, and hydrochloric acid is used as the leaching solution because of its better leaching efficiency of gallium. Eventually, the leaching efficiency of the gallium can reach to 98%.

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Recycling of metal-organic chemical vapor deposition waste of GaN based power device and LED industry by acidic leaching: Process optimization and kinetics study

Cited by 37 publications

References 18 publications

A Review on Recycling of End-of-Life Light-Emitting Diodes for Metal Recovery

A Review on Recycling of End-of-Life Light-Emitting Diodes for Metal Recovery

Recycling the GaN Waste from LED Industry by Pressurized Leaching Method

Recycling the Gan Waste from LED Industry by Pressurized Leaching Method

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