In this work, trioctylphosphine oxide (TOPO) ligand is employed to improve the quality of CsPbBr 1.2 I 1.8 quantum dots (QDs) lms. Lead nitrate (Pb(NO 3 ) 2 ) is also used to passivate the surface of the lms. The study of ligand and surface passivation on the luminous e ciency of red light-emitting diode (LED) is discussed. The CsPbBr 1.2 I 1.8 QDs lms co-doped with TOPO and Pb(NO 3 ) 2 can effectively improve the performance of the CsPbBr 1.2 I 1.8 QDs LEDs due to reduction of non-radiation recombination of the carriers and smooth morphology in the active layer, thus improving the injection and transportation capabilities of carriers. As a result, the highest luminosity and current e ciency are 502.7 cd/m 2 and 0.175 cd/A, respectively.