Redetermination of the valley-orbit (chemical) splitting of the 1<i>s</i>ground state of group-V donors in silicon

Mayur, A. J.; Sciacca, M. Dean; Ramdas, A. K.; Rodríguez, S.

doi:10.1103/physrevb.48.10893

Cited by 52 publications

(41 citation statements)

References 14 publications

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“…The optical cross sections needed for the calculations were taken from the literature. 19 As can be seen for Si:P the agreement between measurement and calculation is quite good. On the contrary for Si:Bi we can note a deviation between theoretical curve and experimental data.…”

Section: Resultsmentioning

confidence: 62%

Terahertz gain on shallow donor transitions in silicon

Жукавин

Shastin

Pavlov

et al. 2007

Journal of Applied Physics

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Small signal gain measurements of optically excited terahertz silicon lasers are reported. Two types of lasers, Si:P and Si:Bi, were investigated. They were optically excited with radiation from a free electron laser or a CO 2 laser. The experiments were performed with an oscillator-amplifier scheme where one sample serves as a laser while the other one is an amplifier. In case of the free electron laser the pump frequency corresponds to intracenter excitation of the 2p 0 or 2p ± states of the P and Bi Coulomb centers, and the gain was determined for the 2p 0 → 1s͑E͒, 2p 0 → 1s͑T 2 ͒ transitions in Si:P and the 2p ± → 1s͑E͒ transition in Si:Bi. Pumping with a CO 2 laser leads to photoexcitation of the Coulomb centers. In this case the gain was determined for the 2p 0 → 1s͑T 2 ͒ of Si:P transition. The gain for intracenter pumping is in the range 5 − 10 cm −1 while for photoexcitation the gain is considerably less, namely ϳ0.5 cm −1 . The experimental results are analyzed and found to be in good agreement with theoretical calculations based on balance equations.

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Section: Resultsmentioning

confidence: 62%

Terahertz gain on shallow donor transitions in silicon

Жукавин

Shastin

Pavlov

et al. 2007

Journal of Applied Physics

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“…b 1s(T 2 ) → 2p 0 transition in the absorption spectra at 44.9 K, N P ≈ 5.2 × 10 15 cm −3 [17]. c 1s(T 2 : Γ 8 ) → 2p 0 transition in the absorption spectra at 30.1 K, N Sb ≈ 2.6 × 10 15 cm −3 [17]. Table 1) at wavelengths in the range 47.2-230 µm (1.3-6.3 THz), which correspond to the different transitions (Fig.…”

Section: Si Lasing In Different Units Si Laser Pump Linementioning

confidence: 98%

Optically pumped terahertz semiconductor bulk lasers

Pavlov¹,

Hübers²,

Orlova

et al. 2002

Physica Status Solidi (b)

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The principles of stimulated emission for the terahertz frequency range from shallow impurity centers in bulk semiconductors are discussed. Evidence of stimulated emission from group V donors embedded in silicon (P, Sb, Bi) as well as spontaneous emission from Li acceptor in monocrystalline ZnSe under excitation by CO 2 laser radiation at low temperatures is demonstrated. The temporal behavior and the emission spectra of the lasers are presented. IntroductionToday, semiconductor lasers bridge a wide range of the electromagnetic spectrum. Many everyday applications in information technology and communications are covered by well-known band-gap visible and infrared diode lasers.Far-infrared (or terahertz, THz) semiconductor lasers are required for applications in molecular and solid-state spectroscopy. However, there is a problem in creating population inversions of charged carriers in semiconductors for the THz spaced states because of the fast phonon-assisted and Auger relaxations that usually tend to thermalize carrier distributions. New proposals for THz semiconductor oscillators are based on the intra-band optical transitions: p-Ge intra-valence band bulk lasers [1], inter-subband quantum cascade [2, 3] and fountain lasers [4] as well as SiGe strained heterostructure lasers [5]. These lasers use the fast low-temperature relaxation processes to maintain the population inversion. In this report the results of an investigation of semiconductor oscillators based on the intra-center optical transitions of shallow donors and acceptors are presented. It is shown that both the acoustic phonon-assisted (AP) and optical phonon-assisted (OP) relaxations can be successfully used to reach population inversion between bound excited states of impurity centers and to obtain lasing under optical excitation.Different mechanisms of population inversion for THz light generation based on the phonon-assisted relaxation of non-equilibrium electrons captured on shallow impurity centers in silicon have been proposed recently [6]. One of them is based on the suppression of the AP relaxation for a particular excited state. This results in a relatively long lifetime (~10 −9 s) of the 2p 0 excited neutral donor (P, As, Sb) state, which can be used for the accumulation of charge carriers [7]. Another mechanism uses the resonant coupling of the 2s and 2p 0 excited states of the Bi donor to the ground state via inter-valley optical pho-

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“…The momentum of these phonons is small (maximum ∼ 0.3 × 2π/a) and it is likely that they produce dominantly intravalley transitions, though at the highest energy they could also produce intervalley g-phonon transitions. [14][15][16]20 . The left hand side shows the phonon density of states (DOS) from Ref.…”

Section: Introductionmentioning

confidence: 99%

Competition between homogeneous and inhomogeneous broadening of orbital transitions in Si:Bi

et al. 2017

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We present results for the lifetime of the orbital transitions of Bi donors in Si, measured using both frequency domain and time-domain techniques, allowing us to distinguish between homogeneous and inhomogeneous processes. The proximity of the energy of the optically allowed transitions to the optical phonon energy means that there is an unusually wide variation in the lifetimes and broadening mechanisms for this impurity, from fully homogeneous lifetime-broadened transitions to fully inhomogeneously broadened lines. The relaxation lifetime (T 1 ) of the states range from the low 10's to 100's of ps, and we find that there is little extra dephasing (so that T 1 is of the order of T 2 /2) in each case.2

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Redetermination of the valley-orbit (chemical) splitting of the 1sground state of group-V donors in silicon

Cited by 52 publications

References 14 publications

Terahertz gain on shallow donor transitions in silicon

Terahertz gain on shallow donor transitions in silicon

Optically pumped terahertz semiconductor bulk lasers

Competition between homogeneous and inhomogeneous broadening of orbital transitions in Si:Bi

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