Redistribution of <i>in</i> <i>situ</i> doped or ion-implanted nitrogen in polysilicon

Nakayama, Satoshi; Sakai, T.

doi:10.1063/1.361831

Cited by 10 publications

(9 citation statements)

References 20 publications

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“…SIMS profiles confirm that the implanted Gaussian Nprofiles are redistributed during the oxidation process; part of the N atoms piles up at the SiC/SiO 2 -interface (see Fig. 11) in a similar way as is observed for polysilicon/SiO 2 -interfaces [40]. The portion of N atoms which accumulates at the SiC/SiO 2 -interface, decreases with increasing oxide thickness d ox .…”

Section: (D) ()supporting

confidence: 64%

Alternative techniques to reduce interface traps in n‐type 4H‐SiC MOS capacitors

Pensl

Beljakowa

Frank

et al. 2008

Physica Status Solidi (b)

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Several alternative oxidation techniques are developed and tested with the aim to reduce the high density of interface traps Dit in n‐type 4H‐SiC MOS capacitors. A lamp furnace in combination with a microwave plasma is employed to grow thin oxide layers, which are used for an insulating stack (SiO2 and Al2O3). The treatment of the oxide with nitrogen is another way to lower Dit. We introduce N atoms prior to the oxidation by ion implantation. During the oxidation process, the implanted N‐profile is redistributed; a considerable amount of the implanted N is accumulated at the SiC/SiO2‐interface, which leads to a strong reduction of Dit and a large negative flatband voltage. The negative flatband voltage can largely be compensated by coimplantation of aluminum. A model is proposed, which explains the passivation of interface traps in n‐type 4H‐SiC MOS capacitors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: (D) ()supporting

confidence: 64%

Alternative techniques to reduce interface traps in n‐type 4H‐SiC MOS capacitors

Pensl

Beljakowa

Frank

et al. 2008

Physica Status Solidi (b)

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“…The nitrogen presence in the silicon provokes the deactivation of boron, this can be explained; on the one hand, by the formation of a B-N complex [4], and on the other hand, by the weak diffusivity of nitrogen and its low solubility [7,8]. These results show also, the influence of the boron dose and the annealing temperature on the films conductivity, which tends to increase when these two parameters increase.…”

Section: Figmentioning

confidence: 98%

Study of electrical and structural properties of boron doped polysilicon films with a low nitrogen content

et al. 2005

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In this work we propose, the study of nitrogen doped Silicon films for an application as a poly-Si gate material for metal-oxide-semiconductor devices. Nitrogen doped silicon films have been deposited at amorphous phase by low-pressure chemical vapor deposition (LPCVD) from disilane Si2H6 and ammonia NH3 at low temperature (480°C). The films with varied nitrogen contents have been boron implanted, and annealed at several annealing conditions. The influence of the annealing conditions, the nitrogen tenor and the boron dose on the electrical and the structural properties of films are investigated and correlated. Results show that the conductivity is maximal ( ~10 2 (.cm)-1) for higher annealing temperature, a nitrogen content less than 2% and a strong boron dose. These results indicate that under these optimal conditions, although some nitrogen contents is present in the films, these latter have a conducting behavior. The crystallization of films was found to depend principally on the nitrogen tenor. A quasi-totally crystallization was observed for a nitrogen tenor inferior or equal to 2% and for an annealing temperature of 1100°C during 120 minutes. This result is in good agreement with the greatest value of the conductivity obtained under the same conditions.

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“…The primary beam was rastered over an area 5 Â 5 mm. Secondary ions, 16 O À and 28 Si 14 N À , were detected.…”

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confidence: 99%

“…Moreover, N concentration in the sub-surface is lower than that of bulk due to the outdiffusion. For the adequate observation of correlation between oxygen precipitates and N, the samples for SIMS measurement were etched 100 mm in depth from the surface as is the case of experiment of Sueoka et al 14) Figure 2 shows the two-dimensional intensity mapping and line profiles of secondary ion, (a) 16 O À and (b) 28 Si 14 N À . As shown in Fig.…”

mentioning

confidence: 99%

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Aggregation of Nitrogen on Oxygen Precipitate in Annealed Czochralski Silicon Wafer Observed by Secondary Ion Mass Spectroscopy Measurement

Tanahashi

Yamada-Kaneta

2006

jjap

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Nitrogen (N) distribution in the annealed Czochralski (CZ) wafer is investigated by secondary ion mass spectroscopy (SIMS) imaging measurement. Intensity mapping of secondary ions shows the aggregation of N on the oxygen precipitate in the annealed wafer. Infrared absorption peak caused by interstitial N pairs (N-N pairs) is observed in the as-grown wafer. Based on the experimental results of SIMS and Fourier transform infrared absorption (FT-IR) measurement, behavior of N during annealing for the annihilation of sub-surface void defects is discussed.

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Redistribution of in situ doped or ion-implanted nitrogen in polysilicon

Cited by 10 publications

References 20 publications

Alternative techniques to reduce interface traps in n‐type 4H‐SiC MOS capacitors

Alternative techniques to reduce interface traps in n‐type 4H‐SiC MOS capacitors

Study of electrical and structural properties of boron doped polysilicon films with a low nitrogen content

Aggregation of Nitrogen on Oxygen Precipitate in Annealed Czochralski Silicon Wafer Observed by Secondary Ion Mass Spectroscopy Measurement

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