Redistribution of implanted chlorine in SiO2 films on silicon during subsequent oxidation

Sheu, Yu-Miin; Butler, S. R.; Magee, C. W.

doi:10.1007/bf02659020

Cited by 3 publications

(6 citation statements)

References 6 publications

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“…In this case, it is possible that trace water contamination in the Clz oxide fabrication (-2 ppm in the furnace effluent) is responsible for the replacement reaction in C12 oxides. This conclusion is fully consistent with the previously reported dependence on annealing ambient in experiments on implanted C1 (11).…”

Section: Discussionsupporting

confidence: 93%

“…A basic conclusion of the C1 data is that C1 impurities are incorporated also as bonded, immobile -=Si-C1, and not molecular dissolved, mobile C1 (20,21). This has b_een previously suggested (10,11). The processes just described should result in measured H and C1 concentrations which are uniform.…”

Section: Analysis and Discussionmentioning

confidence: 58%

“…Co is the equilibrium concentration of Si-C1 at the outer interface, which is negligible compared to Cf and Ci. To facilitate the analysis we define an effective position x' (x') 2 = (dox -x) 2 + A(dox -x) [14] The final form of the expression is in Cf = -kd(x') 2 + In Ci [15] where as previously defined kd = k,Cw(O)/B [11] On a plot of log C vs. (x') 2 Eq. [12] is linear, with slope and intercept equal to kd and log C~, respectively.…”

Section: Discussionmentioning

confidence: 99%

“…In a previous paper, we presented a semiquantitative analysis of C1 concentration profiles measured by SIMS (11). The profiles were obtained in the course of high temperature (900~ reoxidation of thermal oxide films implanted with C1; the analysis indicated that redistribution of the implanted C1 during the reoxidation step can be controlled by either reaction or diffusion.…”

mentioning

confidence: 99%

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The Distribution of Cl Impurities in SiO2 Films Produced by Thermal Oxidation of Si in Cl‐Containing Ambients

Sheu¹,

Butler²,

Feigl³

et al. 1986

J. Electrochem. Soc.

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C1 was introduced into SiO2 films by thermally oxidizing (100) Si in either OJHC1 or O2/C12 gas mixtures at llO0~ C1 concentration vs. depth profiles in these oxide films were determined by SIMS (secondary ion mass spectrometry). Analysis of the C1 distributions shows that, after incorporation into the SiO2 network at the interface, in the bulk of the growing oxide the bonded C1 is removed from the network. This process is analyzed quantitatively as a chemical reaction in which H20 reacts to replace C1 with OH. The kinetics of this replacement reaction and of the oxide film growth determine the C1 concentration vs. depth profiles in the grown films. The replacement reaction kinetics are faster when H20 is present than when only O2 is present. This accounts for the significantly different CI profiles in HCI oxides and Cl2 oxides. These observations are consistent with previous studies of the redistribution of implanted CI in oxide films during a second oxidation step.Oxidation of Si in chlorine-containing ambients is a widely used process in preparing gate oxide films for Si devices (1). In this process C1 is incorporated into the SIO2, and is found to be segregated primarily near the Si/SiO2 interface (2-4). Recent C1 concentration vs. depth profiles determined by secondary ion mass spectrometry (SIMS) show a significant amount of C1 distributed in the oxide with increasing concentration toward the Si/SiO2 interface (5-9). One interpretation of these profiles was that the measured C1 was determined by the high temperature distribution of a mobile, diffusing C1 species (7). The authors suggested that the C1 transport was by a "field-aided" diffusion process, against the concentration gradient. However, the origin of such a field was not established. In contrast, the C1 profile was suggested to be determined by a reaction-controlled process (9, 10). This difference has not been resolved. The question will be addressed in this paper.In a previous paper, we presented a semiquantitative analysis of C1 concentration profiles measured by SIMS (11). The profiles were obtained in the course of high temperature (900~ reoxidation of thermal oxide films implanted with C1; the analysis indicated that redistribution of the implanted C1 during the reoxidation step can be controlled by either reaction or diffusion. Which process dominates depends on the concentration of mobile molecular species (H~O or O2) capable of displacing chlorine species bonded into the SiO2 network (=-Si-C1) and on the relative magnitude of forward and reverse reaction rates in the displacement reaction. In fact, the redistribution process is slow and reaction limited in dry reoxidizing ambients (of order 1 ppm H20). It is fast and possibly diffusion limited in wet ambients (more than 1% H20).Similar processes should determine the distribution of chlorine within oxide films fabricated by thermal oxidation of silicon in ambients containing HC1. Because of the gas-phase reaction of HC1 and O2, the molecular species HC1, C12, 02, and H20 will be present in ...

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Section: Discussionsupporting

confidence: 93%

Section: Analysis and Discussionmentioning

confidence: 58%

Section: Discussionmentioning

confidence: 99%

mentioning

confidence: 99%

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The Distribution of Cl Impurities in SiO2 Films Produced by Thermal Oxidation of Si in Cl‐Containing Ambients

Sheu¹,

Butler²,

Feigl³

et al. 1986

J. Electrochem. Soc.

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“…Among different halogens, Cl is the most common passivation element. An introduced Cl species possibly bonds to an oxide glass network that forms Si-Cl bonds [183]. Kriegler [184] indicated that the passivating species is a Si-O-Cl complex, where O lattice sites are substituted by Cl.…”

Section: Passivation and Elimination Of Mobile Ionsmentioning

confidence: 99%

Bias temperature instability in SiC metal oxide semiconductor devices

Yang¹,

Wei²,

Wang³

2021

J. Phys. D: Appl. Phys.

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Although silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC MOSFET and V fb in MOS capacitor after the device is operated at a high temperature, seriously affects device reliability and limits further commercial applications. These instabilities are mainly attributed to charge trapping at and near the SiC/SiO 2 interface and mobile ions in a gate oxide. The consequences of V th instability are serious and can worsen the performance and lifetime of SiC MOS devices. In this review, the SiC/SiO 2 interface issue is introduced, and BTI occurring in current SiC MOS devices is described in detail. V th /V fb instability behavior induced by measurement and stress conditions, microscopic defects and instability mechanisms, recent measurement techniques of near-interfacial oxide traps, and BTI improvement resulting from the fabrication processes are described. BTI improvement mainly involves the control of charge trapping and movements of ions. The fabrication processes are related to oxidation and pre-and post-oxidation treatments. This review can help deepen our understanding of BTI and reduce its influence on SiC MOS devices performance.

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Interface properties and bias temperature instability with ternary H–Cl–N mixed plasma post-oxidation annealing in 4H–SiC MOS capacitors

Yang

Zhang

Yin

et al. 2019

Applied Surface Science

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Redistribution of implanted chlorine in SiO2 films on silicon during subsequent oxidation

Cited by 3 publications

References 6 publications

The Distribution of Cl Impurities in SiO2 Films Produced by Thermal Oxidation of Si in Cl‐Containing Ambients

The Distribution of Cl Impurities in SiO2 Films Produced by Thermal Oxidation of Si in Cl‐Containing Ambients

Bias temperature instability in SiC metal oxide semiconductor devices

Interface properties and bias temperature instability with ternary H–Cl–N mixed plasma post-oxidation annealing in 4H–SiC MOS capacitors

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