Within
molecular electronics, the molecular-scale transistor provides
a compelling and central device. While substantial efforts have been
expended on this subject, current embodiments typically involve cumbersome
gating with nonintuitive routes for integration. In this theoretical
study, we examined the efficacy of combining a new molecular architecture
with the well-established atomic resolution of the Si(100)2 ×
1 hydride-terminated surface to provide a molecular-scale modulation
scheme that is conceptually easier to integrate. A series of alkyl-substituted
carbazoles: ethylcarbazole, butylcarbazole, hexylcarbazole, and decylcarbazole,
operating in the σ–π motif provided the transport
conduit through extended conjugation of π–π stacking
upon assembly along the Si(100)2 × 1 dimer row. It was found
that alkyl substituent lengths greater than four methylene units (butylcarbazole)
effectively isolated the extended π-conjugation from the underlying
substrate by preventing tunneling due to breakdown at terminal alkyl
chains as well as coupling of eigenstates between the π-stack
and silicon crystal. These findings were corroborated by systematically
stepping through the alkyl substitution length and noting the distribution
of eigenstates for all peaks in the corresponding transmission spectrum
of π-stacked wires along with plotting the zero-bias resistance
against the wire length. The resistance plots demonstrated a single,
molecularly isolated, tunneling-type scaling factor β for hexyl
through decylcarbazole. In contrast, an inflection point was observed
for the shorter ethyl and butylcarbazole, indicating a transition
to dual, substrate routed, conduction pathways in these cases. Further
investigation of device response to localized gate potentials demonstrated
that substituent lengths greater than six methylene units (hexylcarbazole)
could block eigenstate coupling between the π-stack and substrate
for gate potentials in the range of −4 to 1.5 V. This degree
of isolation supported a modulation factor of over a 106× in
conductance. These results suggest that elongating the σ group
in crystalline organized σ–π assemblies may support
transistor modulation by exploiting the underlying substrate as an
easily integrated gate.