Redox Reaction Switching Mechanism in RRAM Device With  $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Syu, Yong-En; Chang, Ting‐Chang; Tsai, Tsung-Ming; Hung, Ya-Chi; Chang, Kuan‐Chang; Tsai, Ming-Jinn; Kao, Ming-Jer; Sze, Simon M.

doi:10.1109/led.2011.2104936

Cited by 124 publications

(48 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Recently, the Resistive Random Access Memory (RRAM) has become widely popular because of high density storage, high speed to read and write, low power consumption, simple MetalInsulator-Metal (MIM) sandwich, configuration compatibility with CMOS, [1][2][3][4][5] and relatively small size of device for the Resistance Switching (RS) phenomenon, which is embedded in the device by using one or a few conducting parts of channel. The atomic switch usually has an asymmetric structure where an insulator (HfO 2 , NiO, ZrO 2 , Ti 2 O 5 ,etc) [6][7][8][9][10][11] layer is sandwiched between an oxidiza-ble electrode (Ag or Cu) and an inert electrode (Pt or Au).…”

Section: Introductionmentioning

confidence: 99%

Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

et al. 2016

View full text Add to dashboard Cite

The work investigated the shape and orientation of oxygen vacancy clusters in HfO2-base resistive random access memory (ReRAM) by using the first-principle method based on the density functional theory. Firstly, the formation energy of different local Vo clusters was calculated in four established orientation systems. Then, the optimized orientation and charger conductor shape were identified by comparing the isosurface plots of partial charge density, formation energy, and the highest isosurface value of oxygen vacancy. The calculated results revealed that the [010] orientation was the optimal migration path of Vo, and the shape of system D4 was the best charge conductor in HfO2, which effectively influenced the SET voltage, formation voltage and the ON/OFF ratio of the device. Afterwards, the PDOS of Hf near Vo and total density of states of the system D4_010 were obtained, revealing the composition of charge conductor was oxygen vacancy instead of metal Hf. Furthermore, the migration barriers of the Vo hopping between neighboring unit cells were calculated along four different orientations. The motion was proved along [010] orientation. The optimal circulation path for Vo migration in the HfO2 super-cell was obtained.

show abstract

Section: Introductionmentioning

confidence: 99%

Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

et al. 2016

View full text Add to dashboard Cite

show abstract

“…[8][9][10][11][12][13] Among numerous resistive switching materials, the silicon-based oxide thin films were intensively investigated for the applications in RRAM for portable electrical devices owing to its compatibility in integrated circuit (IC) processes and relative stability compared with metal oxide materials. [14][15][16][17][18][19][20][21][22][23][24][25][26] Filament formation and rupture is considered to be the reason of resistive switching in RRAM devices.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

Zhang

Tsai

Chang

et al. 2013

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

In this paper, multi-layer Zn:SiO2/SiO2 structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO2/SiO2 structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices.

show abstract

“…Technological development of on-display devices, logic IC, batteries, and memory is crucial for advanced portable electronic product applications. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] Among these devices, a reliable, fast-working, and energy-saving nonvolatile memory is extremely important, especially for portable applications. Resistance random access memory (RRAM) has great potential to serve as the next-generation nonvolatile memory device due to its simple structure, low power consumption, rapid operation, and high density integration capability.…”

mentioning

confidence: 99%

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

Tseng

Tsai

Chang

et al. 2015

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

In this study of resistance random access memory in a resistive switching film, the breakdown degree was controlled by varying forming current compliance. A SiOx layer was introduced into the ZnO layer of the structure to induce both typical bipolar resistive switching (RS) and complementary resistive switching (CRS). In addition, the SiOx layer-generated vacuum spaces in typical bipolar RS can be verified by electrical characteristics. Changing forming current compliance strikingly modifies the oxygen storage capacity of the inserted SiOx layer. CRS can be achieved, therefore, by tuning the oxygen ion storage behavior made possible by the SiOx layer.

show abstract

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Cited by 124 publications

References 9 publications

Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

Contact Info

Product

Resources

About