Reduced dielectric loss in Ba0.95Sr0.05(Fe0.5Nb0.5)O3 thin film grown by pulsed laser deposition

Patel, Piyush Kumar; Yadav, K. L.; Kaur, Gurpreet

doi:10.1039/c4ra03502j

Cited by 9 publications

(5 citation statements)

References 33 publications

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“…In the high frequency range, the effects of the vacancies and defects are reduced, leading to merely a slightly higher dielectric constant. It should be noticed that, for the thin film with~200 nm, the dielectric constant (70.1 at 10 6 Hz for the SSCO film with 16% Co doping) obtained in this work was higher than that of other perovskite films such as BaSrO3 (~55.0) and BiFeO3 (~11.6) 25,26 , though a relatively higher dielectric loss (SSCO film: 0.15; BaSrO3 film: 0.09; BiFeO3 film: 0.06) was observed, which may come from the existence of higher concentration of vacancies and defects in the Co doped films.…”

Section: Resultsmentioning

confidence: 51%

“…4(a) shows the dielectric constant-frequency plots of SSCO films in the frequency range of 40-10 7 Hz at room temperature. In the low frequency range below 10000 Hz, the Co-doped films exhibit obviously higher dielectric constant than the undoped one, which may be related to the higher concentration of oxygen va- Vol.32 cancies and other defects in the Co doped films formed in the growth environment via PLD 25 . In the high frequency range, the effects of the vacancies and defects are reduced, leading to merely a slightly higher dielectric constant.…”

Section: Resultsmentioning

confidence: 99%

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Microstructure and Band Gap Modulation of SrSn1-xCoxO3 Epitaxial Thin Films via Pulsed Laser Deposition

Hu¹,

<²,

Gao³

et al. 2016

Acta Physico-Chimica Sinica

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摘要：钙钛矿结构 SrSnO3因其独特的介电和半导体性质而备受关注，通过掺杂可显著调控其电学、磁学性能，拓宽其应用范围。本研究在单晶 SrTiO3(001)衬底上通过脉冲激光方法外延生长了 SrSn1-xCoxO3 (x = 0, 0.16, 0.33, 0.5) (SSCO)薄膜，探究了 Co 含量对薄膜结晶性、微观结构、光学性能以及介电性能的影响。结果表明，SrSn1-xCoxO3薄膜可在 SrTiO3(001)衬底上外延生长，Co 掺杂不会导致薄膜结晶质量的劣化。薄膜表面形貌平整、致密，膜厚 200 nm，表面粗糙度为 0.44 nm。随薄膜中 Co 掺杂量增加，薄膜透过率从 90%降

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Section: Resultsmentioning

confidence: 51%

Section: Resultsmentioning

confidence: 99%

Microstructure and Band Gap Modulation of SrSn1-xCoxO3 Epitaxial Thin Films via Pulsed Laser Deposition

Hu¹,

<²,

Gao³

et al. 2016

Acta Physico-Chimica Sinica

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“…Among them, PLD is a versatile technique to fabricate multicomponent thin lm materials in which raster scanning of high energy pulsed laser ablates the target material and produces the plasma plume. 8,9 The high temperature reaction between ablated ions/ molecules in the plume with the background gas results in scattering, expansion of angular spreading of the plume and then the number of eroded species trying to move towards the substrates. 10 The mean free path of the ablated plume particles in the background gas is strongly depends on the pressure and type of the gas used.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and up/down conversion luminescence properties of Na_0.5R_0.5MoO₄:Ln³⁺ (R³⁺ = La, Gd), (Ln³⁺ = Eu, Tb, Dy, Yb/Er) thin phosphor films grown by pulsed laser deposition technique

Krishnan

Thirumalai

2014

RSC Adv.

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Single crystalline nano thin phosphor films of (Na 0.5 R 0.5 )MoO 4 :Ln 3+ (R 3+ = La, Gd), (Ln 3+ = Eu, Tb, Dy, Yb/Er) have been deposited on the quartz substrates by pulsed laser deposition (PLD) technique. In this work, we clearly explained the target preparation, pre-deposition cleaning of substrates using the piranha cleaning, and optimized growth conditions of thin films. The deposition was carried out using an 10 Nd-YAG laser (λ = 1064 nm) in an ultra-high vacuum (UHV) with an oxygen back pressure of 300 mTorr at different substrate temperature. To examine the crystal structure, 3D surface topography and film thickness, the as-deposited samples were characterized by X-ray diffraction (XRD), atomic force microscope (AFM), scanning electron microscope (SEM), respectively. The thin phosphor films possess scheelite tetragonal crystal structure with the space group I4 1 /a. The down-conversion luminescence 15 properties of Eu 3+ , Tb 3+ , Dy 3+ doped (Na 0.5 R 0.5 )MoO 4 phosphor films were studied in detail. Under 980 nm NIR laser excitation, the Yb 3+ /Er 3+ doped (Na 0.5 R 0.5 )MoO 4 thin films show intense up-converted green emission identified at 524 nm due to the transition from the populated 2 H 11/2 level to 4 I 15/2 ground level of erbium ion. The fluorescence decay time for the major transitions in (Na 0.5 R 0.5 )MoO 4 when doped with Eu 3+ ( 5 D 0 → 7 F 2 ), Tb 3+ ( 5 D 4 → 7 F 5 ), Dy 3+ ( 4 F 9/2 → 6 H 13/2 ) and Yb 3+ /Er 3+ ( 2 H 11/2 → 4 I 15/2 ) are determined and to 20 ensure the color richness, CIE color coordinates were also calculated. The obtained results suggesting that the potential (Na 0.5 R 0.5 )MoO 4 :Ln 3+ thin phosphor films can serve as an excellent material for electro/cathodo-luminescence and display applications.

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“…Using the McLean analysis [51,52] the optical band gap can be best described by a direct allowed transition (n = 2) in accordance with Patel at al. [53]. Thus, the optical band gap (E g ) can be determined by plotting Weiss behaviour.…”

Section: Diffuse Reflectance Magnetic and Dielectric Investigationsmentioning

confidence: 99%

Investigations of BaFe0.5Nb0.5O3 nano powders prepared by a low temperature aqueous synthesis and resulting ceramics

Köferstein

Ebbinghaus

2017

Journal of the European Ceramic Society

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A facile method to prepare nanoscaled BaFe 0.5 Nb 0.5 O 3 via synthesis in boiling NaOH solution is described herein. The nano-crystalline powder has a high specific surface area of 55 m 2 g −1 and a crystallite size of 15 nm. The as-prepared powder does not show any significant crystallite growth up to 700 °C. The activation energy of the crystallite growth process was calculated as 590 kJ mol −1. Dense ceramics can be obtained either after sintering at 1200 °C for 1 h or after two-step sintering at 1000 °C for 10 h. The average grain sizes of ceramic bodies can be tuned between 0.23 µm and 12 µm. The thermal expansion coefficient was determined as 11.4(3)⋅10 −6 K −1. The optical band gap varies between 2.90(5) and 2.63(3) eV. Magnetic measurements gave a Néel temperature of 20 K. Depending on the sintering regime, the ceramic samples reach permittivity values between 2800 and 137000 at RT and 1 kHz.

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Reduced dielectric loss in Ba0.95Sr0.05(Fe0.5Nb0.5)O3 thin film grown by pulsed laser deposition

Cited by 9 publications

References 33 publications

Microstructure and Band Gap Modulation of SrSn<sub>1-<i>x</i></sub>Co<sub><i>x</i></sub>O<sub>3</sub> Epitaxial Thin Films <i>via</i> Pulsed Laser Deposition

Microstructure and Band Gap Modulation of SrSn<sub>1-<i>x</i></sub>Co<sub><i>x</i></sub>O<sub>3</sub> Epitaxial Thin Films <i>via</i> Pulsed Laser Deposition

Synthesis and up/down conversion luminescence properties of Na_0.5R_0.5MoO₄:Ln³⁺ (R³⁺ = La, Gd), (Ln³⁺ = Eu, Tb, Dy, Yb/Er) thin phosphor films grown by pulsed laser deposition technique

Investigations of BaFe0.5Nb0.5O3 nano powders prepared by a low temperature aqueous synthesis and resulting ceramics

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Reduced dielectric loss in Ba0.95Sr0.05(Fe0.5Nb0.5)O3 thin film grown by pulsed laser deposition

Cited by 9 publications

References 33 publications

Microstructure and Band Gap Modulation of SrSn<sub>1-<i>x</i></sub>Co<sub><i>x</i></sub>O<sub>3</sub> Epitaxial Thin Films <i>via</i> Pulsed Laser Deposition

Microstructure and Band Gap Modulation of SrSn<sub>1-<i>x</i></sub>Co<sub><i>x</i></sub>O<sub>3</sub> Epitaxial Thin Films <i>via</i> Pulsed Laser Deposition

Synthesis and up/down conversion luminescence properties of Na0.5R0.5MoO4:Ln3+ (R3+ = La, Gd), (Ln3+ = Eu, Tb, Dy, Yb/Er) thin phosphor films grown by pulsed laser deposition technique

Investigations of BaFe0.5Nb0.5O3 nano powders prepared by a low temperature aqueous synthesis and resulting ceramics

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Synthesis and up/down conversion luminescence properties of Na_0.5R_0.5MoO₄:Ln³⁺ (R³⁺ = La, Gd), (Ln³⁺ = Eu, Tb, Dy, Yb/Er) thin phosphor films grown by pulsed laser deposition technique