Reduced electrical performance of Zn enriched ZnTe nanoinclusion semiconductors thin films for buffer layer in solar cells

Mahmood, Waqar; Thomas, Andrew G.; Haq, Anwar Ul; Shah, Nazar Abbas; Nasir, Muhammad Farooq

doi:10.1088/1361-6463/aa7157

Cited by 19 publications

(31 citation statements)

References 23 publications

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“…Waqar Mahmood 1,2,3 * , Junaid Ali 4 , Andrew Thomas 2,5 , Saif ullah Awan 6 , Mark Jackman 2 , Anwar-ul-Haq 7 , M. Umair Hassan 4 , Nazar Abbas Shah 3 Introduction II-VI semiconductor family has received a lot of attraction for their tunable optical and electrical properties [1][2][3][4]. Cadmium sulfide (CdS) is a member of II-VI chalcogenide semiconductor family.…”

Section: Role Of Ag 1+ Substitutional Defects On the Electronic And Omentioning

confidence: 99%

“…It is a potential candidate for extensively uses in the technology of optoelectronics, photovoltaic and photo catalysis devices because of its amazing electrical and optical properties (i.e. emission in visible range) [2][3][4]. Other great impending applications include its usage as photo detectors, optical filters, solar cells applications and photo-resistive switches [4][5][6].…”

Section: Role Of Ag 1+ Substitutional Defects On the Electronic And Omentioning

confidence: 99%

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Role of Ag1+ substitutional defects on the electronic and optical properties of n-type CdS thin films semiconductor for sustainable and stable window layer in solar cells technology

et al. 2018

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Section: Role Of Ag 1+ Substitutional Defects On the Electronic And Omentioning

confidence: 99%

Section: Role Of Ag 1+ Substitutional Defects On the Electronic And Omentioning

confidence: 99%

Role of Ag1+ substitutional defects on the electronic and optical properties of n-type CdS thin films semiconductor for sustainable and stable window layer in solar cells technology

et al. 2018

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“…It can be observed that some large particles or droplets could be observed on the surface of the film, as shown by the white dots. [21] The atomic ratio of Zn and Te is about 54:46, indicating that Te vacancies appear in ZnTe films. [20] X-ray photoelectron spectroscopy (XPS) spectra of Zn 2p and Te 3d of ZnTe film are shown in Figure 2c,d, respectively, well consistent with the fingerprints of Zn and Te atoms.…”

Section: Resultsmentioning

confidence: 99%

High‐Performance Organic Field‐Effect Transistor with Matching Energy‐Band Alignment between Organic Semiconductor and the Charge‐Trapping Dielectric

Wang

Yang

Ding

et al. 2019

Adv Elect Materials

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speed, serious retention degradation, and instability in air still should be overcome for the charge-trap OFETs. [10][11][12] The charge-trap OFET derives from the complementary metal-oxide semiconductor silicon-oxide-nitride-oxide-silicon (SONOS) memory, which is nowadays the most viable solution to replace the current floating gate-based technology and to scale the Flash NAND memories beyond the 16 nm node, [13] although its working mechanism including the carrier transportation in organic semiconductor and the transfer characteristics of OFET is not completely consistent with that of SONOS memory. Recently, much efforts have been made to achieve high performance Si-based chargetrap memory (CTM) devices through matching the energy-band alignments between Si and the charge-trapping dielectric. [14][15][16] It was found that at an applied electric field, the lower difference between the conduction-band minimum of Si and the charge-trapping dielectrics leads to a larger memory window, a higher programming/erasing speed and a better retention characteristics for the CTM devices. So theoretically a nonvolatile charge-trap OFET with matching alignment between the energy band of the charge-trapping dielectric and the corresponding molecular orbitals of organic semiconductor should also get an enhanced performance.ZnTe is an II/VI semiconductor, and the conduction band minimum and the valence band maximum have matching High-performance bottom-gate nonvolatile organic field-effect transistor (OFET) devices based on a special matching energy-band alignment between the organic semiconductor pentacene and the charge-trapping dielectric ZnTe are reported. The lower potential difference between the conduction band minimum of ZnTe and the lowest unoccupied molecular orbital of pentacene with a weak electron conductivity endows the OFET a memory window of 10 V at an applied sweeping gate-voltage of ±15 V, a high I ON /I OFF ratio of more than 10 6 , and good retention with a high I ON /I OFF ratio of 6 × 10 5 after 10 4 s. The large memory window of the OFET is attributed to the unique energy-band alignment of the memory device and the high density of traps in Te-deficient ZnTe film, and the prominent retention is attributed to the deeply trapped electrons in the potential well formed by Al 2 O 3 tunneling and blocking layers.

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“…The rough surface thin films are synthesized using closed space sublimation technique for solar cell applications [75][76][77][78][79]. The complete device with highest reported efficiency of more than 16 % was fabricated using this technique along with chemical bath deposition.…”

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confidence: 99%

“…Pre-annealing process was started once the required source and substrate temperatures achieved with deposition time, the source lamp was switched off and the substrate lamp was still 'on' till the source temperature was dropped to substrate temperature. At the end of deposition, the source-substrate temperatures were switched 'off' and the chamber was left for cooling down to room temperature under vacuum to avoid oxidation [75][76][77][78][79][80][81].…”

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confidence: 99%

Zinc Telluride Thin Films: A Review

Soonmin¹,

Olusola²,

Sharma³

et al. 2018

Asian J. Chem.

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INTRODUCTIONExtensive research has been carried out on the deposition and characterization of polycrystalline thin films by several researchers . These materials are used in optical instruments, solar cells, telecommunications terminals, in-vehicle equipment, traffic lights, magnetic films, diamond films, microelectronic devices, solar selective coatings, sensor devices, optical mass memories and superconducting films. In recent years, binary semiconductor material such as zinc telluride has been studied by many scientists. Recent investigations have shown that zinc telluride thin films show absorption in the spectrum range from visible to near infrared (as widely reported in the literature). The II-VI (ZnTe) compound semiconductors have a direct transition at 2.26 eV. Therefore, ZnTe is capable of green light emission at 550 nm, i.e. in spectral region corresponding to the maximum sensitivity of the human eye. This makes ZnTe an appealing candidate for the production of bright light-emitting diodes and diode lasers. There are several reports available on the growth of zinc telluride thin films by different deposition methods such as electro-deposition method [33][34][35] Zinc telluride thin films can be used in a large variety of applications such as optoelectronics and microelectronics tools. In this paper, the growth of ZnTe films prepared by electrodeposition, thermal evaporation and closed space sublimation method with various precursors and some its physical properties of obtained zinc telluride films are discussed.

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Reduced electrical performance of Zn enriched ZnTe nanoinclusion semiconductors thin films for buffer layer in solar cells

Abstract: Closed space sublimation (CSS) technique was employed to deposit thin films of Zinc Telluride

Cited by 19 publications

References 23 publications

Role of Ag1+ substitutional defects on the electronic and optical properties of n-type CdS thin films semiconductor for sustainable and stable window layer in solar cells technology

Role of Ag1+ substitutional defects on the electronic and optical properties of n-type CdS thin films semiconductor for sustainable and stable window layer in solar cells technology

High‐Performance Organic Field‐Effect Transistor with Matching Energy‐Band Alignment between Organic Semiconductor and the Charge‐Trapping Dielectric

Zinc Telluride Thin Films: A Review

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