2021
DOI: 10.1117/1.jmm.20.3.034401
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Reduced lifetime of EUV pellicles due to defects

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Cited by 2 publications
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“…Simulations of pellicles and contaminant particles in pellicles were performed to examine mechanical and thermal deformations and crack time following thermal deformation with a finite element method (FEM) tool such as ANSYS. However, there was no mention about design or solver limitation [21,22]. This study reported solver limitation and locking phenomenon in commercial software types, such as ANSYS and SIEMENS, for transverse deflection of EUV pellicles with a 10 mm × 10 mm × 54-nm (thickness/width length (t/L) = 0.0000054) structure.…”
Section: Introductionmentioning
confidence: 93%
See 1 more Smart Citation
“…Simulations of pellicles and contaminant particles in pellicles were performed to examine mechanical and thermal deformations and crack time following thermal deformation with a finite element method (FEM) tool such as ANSYS. However, there was no mention about design or solver limitation [21,22]. This study reported solver limitation and locking phenomenon in commercial software types, such as ANSYS and SIEMENS, for transverse deflection of EUV pellicles with a 10 mm × 10 mm × 54-nm (thickness/width length (t/L) = 0.0000054) structure.…”
Section: Introductionmentioning
confidence: 93%
“…Figure 3 shows simulation results obtained using a Python program with an analyticalnumerical method [36] for EUV pellicles with a 10 mm × 10 mm × 54-nm structure. Simulation conditions were Young's modulus E = 169 × 10 9 Pa and Poisson's ratio v = 0.22 for polycrystalline silicon (p-Si), Young's modulus E = 454 × 10 9 Pa and Poisson's ratio v = 0.25 for ruthenium (Ru), Young's modulus E = 439.7 × 10 9 Pa and Poisson's ratio v = 0.17 for molybdenum silicide (MoSi 2 ), Young's modulus E = 410 × 10 9 Pa and Poisson's ratio v = 0.14 for silicon carbide (SiC), Young's modulus E = 50 × 10 9 Pa and Poisson's ratio v = 0.36 for tin (Sn), Young's modulus E = 295 × 10 9 Pa and Poisson's ratio v = 0.36 for zirconium disilicide (ZrSi 2 ), Young's modulus E = 300 × 10 9 Pa and Poisson's ratio v = 0.23 for silicon nitride (SiNx), number of approximations K = 5 (20 edge nodes), and a pressure range of 50~200 Pa [21]. Figure 3a,c present the three-dimensional plots of the maximum transverse deflection for SiNx rectangular plates of 10 mm × 10 mm × 54-nm and 10 mm × 10 mm × 540-nm, respectively.…”
Section: Plate Clamped At Contourmentioning
confidence: 99%