Reduced nonradiative recombination in semipolar green-emitting III-N quantum wells with strain-reducing AlInN buffer layers

Abstract

Using strain-reducing partially relaxed AlInN buffer layers, we observe reduced nonradiative recombination in semipolar green-emitting GaInN/GaN quantum wells. Since strain is a key issue for the formation of defects that act as nonradiative recombination centers, we aim to reduce the lattice mismatch between GaInN and GaN by introducing an AlInN buffer layer that can be grown lattice-matched along one of the in-plane directions of GaN, even in the semipolar ð11 22Þ orientation. With the increasing thickness, the buffer layer shows partial relaxation in one direction and thereby provides a growth template with reduced lattice mismatch for the subsequent GaInN quantum wells. Timeresolved photoluminescence measurements show reduced nonradiative recombination for the structures with a strain-reducing buffer layer.

Composition Inhomogeneity in Nonpolar (101̅0) and Semipolar (202̅1) InAlN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

“…21,22 Semipolar (112̅ 2) partially relaxed InAlN buffer layers have been used to reduce the nonradiative recombination in greenemitting InGaN QWs. 23 cation ordering process were reported to take place in order to mitigate the lattice mismatch along the [0001] direction. 20 Note that degradation of the InAlN quality was also reported earlier for thick c-plane InAlN layers grown by MOVPE.…”

“…Intentional control on one-dimensional strain relaxation has been investigated . InAlN was studied in order to use it for UV emitters. , Semipolar (112̅2) partially relaxed InAlN buffer layers have been used to reduce the nonradiative recombination in green-emitting InGaN QWs . Last but not least, the structural quality of thick nonpolar (101̅0) InAlN layers grown on bulk GaN has been studied.…”