Reduced open-circuit voltage deficit in wide-bandgap perovskite solar cells enabled by thiazolidine-based interfacial engineering

Cui, Guangyao; Zhang, Xue; Zhu, Yu; Chen, Cong; Gao, Zhiyu; Wang, Juncheng; Xie, Guangzhong; Huang, Hao; Zou, B. S.; Zhao, Dewei

doi:10.1039/d3tc01566a

Cited by 5 publications

(1 citation statement)

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“…Stress and strain caused by uncontrolled crystal growth can affect the electronic structure and the dynamics of charge carriers, further impacting V OC [44]. Furthermore, uncontrollable crystal growth often introduces numerous point defects, such as vacancies, interstitials, and antisites [45]. These defects can act as recombination centers for charge carriers, increasing nonradiative recombination and consequently reducing V OC [46].…”

Section: Uncontrollable Crystal Kinetics Growth and Poor Film Morphologymentioning

confidence: 99%

Open-circuit voltage deficits in Tin-based perovskite solar cells

Ma,

Wang

2024

J. Phys.: Condens. Matter

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The power conversion efficiency of Pb-based single-junction perovskite solar cells (PSCs) has surpassed 26%; however, the biocompatibility concerns associated with Pb pose threats to both the environment and living organisms. Consequently, the development of Pb-free PSCs is imperative. Among the various alternatives to Pb-based PSCs, Sn-based PSCs have exhibited outstanding optoelectronic properties, showing great potential for large-scale manufacturing and commercialization. Nevertheless, there remains a significant efficiency gap between Sn-based and Pb-based PSCs. The disparity primarily stems from substantial open-circuit voltage (V OC) deficits in Sn-based PSCs, typically ranging from 0.4 to 0.6 V. The main reason of V OC deficits is severe non-radiative recombination losses, which are caused by the uncontrolled crystallization kinetics of Sn halide perovskites and the spontaneous oxidation of Sn2+. This review summarizes the reasons for V OC deficits in Sn-based PSCs, and the corresponding strategies to mitigate these issues. Additionally, it outlines the persistent challenges and future prospects for Sn-based PSCs, providing guidance to assist researchers in developing more efficient and stable Sn-based perovskites.

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Section: Uncontrollable Crystal Kinetics Growth and Poor Film Morphologymentioning

confidence: 99%

Open-circuit voltage deficits in Tin-based perovskite solar cells

Ma,

Wang

2024

J. Phys.: Condens. Matter

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Halogenated Hole Selective Contact Enhances Interfacial Weak Bonding of Perovskite Solar Cells

Wang,

Zhai,

et al. 2024

Advanced Energy Materials

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Weak bonding between the perovskite and charge transport layers can lead to interfacial defects, hindering charge transfer and limiting the efficiency and stability of perovskite solar cells (PSCs). To address this issue, two halogenated spiro[fluorene‐9,9′‐xanthene]‐based molecules (SFX‐DM‐F and SFX‐DM‐Cl) are designed as an interfacial layer between perovskite and hole transport materials (HTMs). Both first‐principles simulations and experimental results are used to demonstrate that these halogenated interfacial layers improve the contact stability between perovskite's Pb(II) and HTMs, increasing the efficiency of charge transfer. The similar structure of interlayer to HTM also enhances the interfacial hole transfer integral, favoring effective hole transport. The PSCs based on SFX‐DM‐Cl achieve power conversion efficiencies of 24.8% (0.0625 cm2) and 23.1% (1 cm2). Even after 2000 h at a relative humidity of 15–20%, the unencapsulated PSC retains 94% of its initial efficiency. This work proposes the halogenated homologous HTMs as interfacial molecular bridges to optimize weak chemical bonds and hole transfer, thereby enabling efficient and stable PSCs.

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