Reduced-size E-band GaAs power amplifier MMIC

Bessemoulin, A.; Tarazi, Jabra; Rodriguez, Melissa C.; McCulloch, MacCrae G.; Parker, Anthony E.; Mahon, Simon J.

doi:10.1109/eumic.2015.7345059

Cited by 6 publications

(4 citation statements)

References 9 publications

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“…21, with lower passive loss compared to a conventional Wilkinson combiner. In the range 60-75 GHz, reported GaAs PAs support [130], and saturated power higher than 28 dBm and 26 dB power gain from 71 to 76 GHz [131]. T-line power combiners are extensively used in these high power PAs.…”

Section: V-band (40-75 Ghz)mentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: V-band (40-75 Ghz)mentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

View full text Add to dashboard Cite

show abstract

“…An E-band PA in the same core process, with similar, small, device widths, maximum backvias, and the same dc power density of 1 W/mm was estimated to have 137 ∘ C gate temperature averaged to spot diameter of 8 μm with a backplate of 85 ∘ C [20]. This amplifier is expected to heat similarly.…”

Section: Amplifier Designmentioning

confidence: 99%

120 GHz microstrip power amplifier MMICs in a commercial GaAs process

Mahon,

McCulloch,

Mihaljevic

et al. 2023

Int. J. Microw. Wireless Technol.

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Single-ended and balanced 90–120 GHz microstrip power amplifier MMICs have been designed for cost-sensitive 5G and 6G backhaul in a commercial 6-inch, 0.1-µm GaAs process. At 108 GHz, measured output power is 20.4 and 22.5 dBm, respectively. At 120 GHz, measured output is 12.6 and 17.4 dBm, respectively. This is the highest reported for GaAs, among the highest reported to date for microstrip MMIC amplifiers at these frequencies and competitive with more expensive InP and GaN processes. Measurement is compared with simulation.

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“…challenging task. Most designers need general purpose models, that must be computationally efficient and at same time must work over a wide frequency range, under different biases and for very different operating conditions, as class C, where the device exhibits a strongly nonlinear behavior, or class A, where operates almost linearly [3], [6]. However, it is not possible for a general-purpose model to obtain excellent predictions in "all" operating conditions (i.e., operating frequency, bias condition, power level, impedance terminations at fundamental, and harmonics), maintaining adequate computational efficiency.…”

mentioning

confidence: 99%

“…The factors that impact on model accuracy at millimeter waves mainly arise from two sources: the first one is related to the availability of measurements to be used for accurate parameter extraction; the second one is related to the adopted model formulation, that under very different operations must guarantee adequate overall accuracy and computational efficiency [6], [7], [8], [9], [10], [11]. This aspect is particularly critical when the technology process is pushed into its limits as happens in the design of broadband highly linear Eband PAs, which are the most critical components in 5G backhauling, where high-order modulations [1024 quadrature amplitude modulation (QAM)] over large bandwidths (2 GHz) are required [1], [2], [3], [4], [5]. This specific application demands a level of accuracy and reliability under linear and quasilinear operation (i.e., up to 1-dB power gain compression) that the foundry models usually do not provide: this ultimately leads to multiple foundry runs with consequent waste of time and money.…”

mentioning

confidence: 99%

On the Extraction of Accurate Non-Quasi-Static Transistor Models for $E$-Band Amplifier Design: Learning From the Past

Vadalà,

Raffo,

Colzani

et al. 2024

IEEE Trans. Microwave Theory Techn.

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In this article, a non-quasi-static (NQS) nonlinear transistor model oriented to E-band power amplifier (PA) design is discussed. A new formulation that describes the millimeter-wave NQS behavior is proposed and the entire model extraction procedure is detailed with the aim of putting in evidence the specific issues posed by working at millimeter-wave frequencies. The model is used in the design of a family of monolithic microwave integrated circuit (MMICs) for realizing complete system-in-package (SIP) transmitter and receiver. The model is first fully validated at transistor level by comparing its predictions with linear and nonlinear measurements, and then with measurements carried out on the realized MMIC amplifiers at E-band.

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Reduced-size E-band GaAs power amplifier MMIC

Cited by 6 publications

References 9 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

120 GHz microstrip power amplifier MMICs in a commercial GaAs process

On the Extraction of Accurate Non-Quasi-Static Transistor Models for $E$-Band Amplifier Design: Learning From the Past

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