2017
DOI: 10.1039/c6ra25853k
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Reducing gas-sensing performance of Ce-doped SnO2 thin films through a cosputtering method

Abstract: SnO2 thin films doped with various concentrations of Ce were grown by cosputtering Sn and Ce metallic targets in an Ar/O2 mixed atmosphere.

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Cited by 70 publications
(34 citation statements)
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“…The optimal operating temperature of the semiconductors is associated with a resultant equilibrium between surface reaction with ethanol vapor and the diffusion of ethanol vapor to the surface of the materials. 1 An optimal operating temperature of the SnO 2 thin lm was 325 C in this study. Furthermore, the highest ethanol gas-sensing response for the WO 3 thin lm was reached at the operating temperature of 350 C which is the maximum temperature of the measurement system.…”
Section: Resultsmentioning
confidence: 89%
See 2 more Smart Citations
“…The optimal operating temperature of the semiconductors is associated with a resultant equilibrium between surface reaction with ethanol vapor and the diffusion of ethanol vapor to the surface of the materials. 1 An optimal operating temperature of the SnO 2 thin lm was 325 C in this study. Furthermore, the highest ethanol gas-sensing response for the WO 3 thin lm was reached at the operating temperature of 350 C which is the maximum temperature of the measurement system.…”
Section: Resultsmentioning
confidence: 89%
“…SnO 2 thin lms have been prepared through various methods such as sputtering, chemical solution deposition, spray pyrolysis deposition, and the sol-gel process. 1,[4][5][6] Of these methods, sputtering has the potential to synthesize oxide thin lms with precise thickness control, tunable crystallinity, and large-area deposition. Sputtering SnO 2 thin lms is therefore of potential interest for gas sensor and photocatalyst applications.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…One Gaussian curve of the O 1 s spectra is associated with the oxygen ions in the Sn 4+ ‐O. The remaining peaks obtained at higher binding energies refer to non‐lattice oxygen that is substantial oxygen vacancies within the crystal lattice and surface defects on doping with Ce into SnO 2 ,,. On comparison, the core level XPS spectrum of pure SnO 2 was also studied and its deconvolution attributed to two peaks centered at 530.9 eV and 531.9 eV (Figure b).…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the introduction of the Ce ions into SnO 2 results in generation of oxygen vacancies . These enormous oxygen vacancies enhanced the photocatalytic activities of Ce doped SnO 2 by slowing down the rate of e − ‐h recombination …”
Section: Resultsmentioning
confidence: 99%