Reducing Interface Resistance in Semiconductor System Through the Integration of Graphene

Abstract

In the quest to improve overall semiconductor system performance as scaling down continues, reducing resistance in interconnects and bonding interfaces has become a critical focus. This study explores the use of graphene, a highly conductive 2D material, as an interfacial layer between metal and dielectric layers to enhance adhesion and stability while reducing contact resistance. Graphene’s excellent adhesion properties make it a promising candidate for improving bonding strength at metal–dielectric interfaces. We investigated the following two approaches: direct growth of graphene via chemical vapor deposition and the transfer of pre-grown graphene onto the metal surface. The contact resistance characteristics of both methods were analyzed, with results indicating that graphene effectively enhances the bonding interface while significantly lowering contact resistance. These findings suggest that incorporating graphene as an interfacial material could lead to improved performance in advanced semiconductor devices, particularly in applications like hybrid bonding and interconnect technology.