Reducing Switching Losses in BLDC Motor Drives by Reducing Body Diode Conduction of MOSFETs

Brown, Cameron; Sarlioglu, Bulent

doi:10.1109/tia.2014.2344506

Cited by 17 publications

(8 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…i g freewheels through the body diodes D S1 and D S4 when S P1 is turned off. When S P1 is turned on, D S1 and D S4 are not turned off immediately because of the slow reverse recovery process [11]. Then, the diode reverse recovery currents cause high voltage spikes across D S1 and D S4 .…”

Section: Active Clamp Circuitmentioning

confidence: 99%

See 1 more Smart Citation

High-Efficiency Design and Control of Zeta Inverter for Single-Phase Grid-Connected Applications

Choi

Yang

2019

Energies

View full text Add to dashboard Cite

The conventional zeta inverter has been used for single-phase grid-connected applications. However, it has high switching losses to operate at high switching frequency in the continuous conduction mode (CCM). To address this drawback, this paper suggests a high-efficiency zeta inverter using active clamp and synchronous rectification techniques. The proposed inverter utilizes the active clamp circuit for reducing switching losses. The non-complementary switching scheme is adopted for not only clamping the switch voltage stresses, but also alleviating the circulating energy. In addition, the synchronous rectification is implemented for reducing the body diode conduction of power switches. By using the silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs), the switching performance of the proposed inverter is improved. Its operation principle and control strategy are presented. A 220-W prototype has been designed and tested to evaluate the performance of the proposed inverter.

show abstract

Section: Active Clamp Circuitmentioning

confidence: 99%

“…D S1 and D S4 are the body diodes, which are turned on for the freewheeling of i g . However, when S P1 is turned on again, D S1 and D S4 are not turned off instantly due to the slow reverse recovery process [11]. The reverse recovery currents of D S1 and D S4 cause high voltage spikes across D S1 and D S4 .…”

Section: Introductionmentioning

confidence: 99%

High-Efficiency Design and Control of Zeta Inverter for Single-Phase Grid-Connected Applications

Choi

Yang

2019

Energies

View full text Add to dashboard Cite

show abstract

“…For instance, Fig. 7(b) shows a configuration that adds a LV-FET to block the third quadrant operation of the SJ-FET only when it is desired [21], [23]. However, the approach increases the complexity not only because of the higher number of elements, but also because a delay must be added in the turn-off gate signal of the SJ-FET with respect to the LV-FET one.…”

Section: B Reverse Recovery Of a Sj-fet (Dynamic Analysis)mentioning

confidence: 99%

Improving the Third Quadrant Operation of Superjunction MOSFETs by Using the Cascode Configuration

Rodríguez

Lamar

Roig

et al. 2019

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

In this paper, the third quadrant behavior of a High-Voltage (HV) Superjunction MOSFET (SJ-FET) in Cascode Configuration (CC) with a Low-Voltage silicon MOSFET (LV-FET) is deeply studied by means of an analytical model and experimental data. The third quadrant dynamic behavior of the SJ-CCs is compared to the standalone counterparts by evaluating their reverse recovery time (tRR), reverse recovery peak current (IRRM) and reverse recovery charge (QRR). An analytical model and experimental results show that the SJ-CC avoids or mitigates the activation of the SJ-FET body-diode during the third quadrant operation. As a consequence, the SJ-CC strongly improves the widely used Figure-of-Merit (FoM) RON·QRR, which considers the on-state resistance of the transistors ( RON). In addition, the results obtained using a SJ-CC are similar or better than the achieved by SJ-FETs with enhanced reverse recovery (i.e., irradiated SJ-FETs). This paper also includes a comparison with commercial wide bandgap switches, concluding that the RON·QRR value provided by the SJ-CC is around eight times higher than the provided by a commercial GaN cascode.

show abstract

“…[22,23] developed a loss model of SiC, and both the conduction loss and switching loss of SiC are less than that of Si. The efficiency of the inverter based on SiC is 99.1% while Much research involving SiC has been widely conducted by many researchers [1,2,[9][10][11][12][13][14][15][16][17][18][19][20][21][22][23]. Most of the work reflects an enormous effort investigating the switching and conduction losses of SiC [1,9,12,23].…”

Section: Introductionmentioning

confidence: 99%

Impact of Silicon Carbide Devices on the Powertrain Systems in Electric Vehicles

2017

View full text Add to dashboard Cite

Abstract:The DC/DC converters and DC/AC inverters based on silicon carbide (SiC) devices as battery interfaces, motor drives, etc., in electric vehicles (EVs) benefit from their low resistances, fast switching speed, high temperature tolerance, etc. Such advantages could improve the power density and efficiency of the converter and inverter systems in EVs. Furthermore, the total powertrain system in EVs is also affected by the converter and inverter system based on SiC, especially the capacity of the battery and the overall system efficiency. Therefore, this paper investigates the impact of SiC on the powertrain systems in EVs. First, the characteristics of SiC are evaluated by a double pulse test (DPT). Then, the power losses of the DC/DC converter, DC/AC inverter, and motor are measured. The measured results are assigned into a powertrain model built in the Advanced Vehicle Simulator (ADVISOR) software in order to explore a direct correlation between the SiC and the performance of the powertrain system in EVs, which are then compared with the conventional powertrain system based on silicon (Si). The test and simulation results demonstrate that the efficiency of the overall powertrain is significantly improved and the capacity of the battery can be remarkably reduced if the Si is replaced by SiC in the powertrain system.

show abstract

Reducing Switching Losses in BLDC Motor Drives by Reducing Body Diode Conduction of MOSFETs

Cited by 17 publications

References 11 publications

High-Efficiency Design and Control of Zeta Inverter for Single-Phase Grid-Connected Applications

High-Efficiency Design and Control of Zeta Inverter for Single-Phase Grid-Connected Applications

Improving the Third Quadrant Operation of Superjunction MOSFETs by Using the Cascode Configuration

Impact of Silicon Carbide Devices on the Powertrain Systems in Electric Vehicles

Contact Info

Product

Resources

About