Reducing the Open-Circuit Voltage Loss of PbS Quantum Dot Solar Cells via Hybrid Ligand Exchange Treatment

Huang, Tengzuo; Wu, Chunyan; Yang, Jinpeng; Hu, Pengyu; Qian, Lei; Sun, Tao; Xiang, Chaoyu

doi:10.1021/acsami.3c16599

Cited by 8 publications

(1 citation statement)

References 51 publications

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“…[ 33 , 34 , 35 ] Although attempts have been made to replace EDT‐passivated CQD HTLs with carboxylic acids and organic p‐type semiconductors, the highest‐performing devices continue to utilize EDT‐passivated CQD‐based HTLs. [ 22 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 ]…”

Section: Introductionmentioning

confidence: 99%

Interfacial Heterojunction Enables High Efficient PbS Quantum Dot Solar Cells

Zhang,

Chen,

Cao

et al. 2024

Advanced Science

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Colloidal quantum dots (CQDs) are promising optoelectronic materials for solution‐processed thin film optoelectronic devices. However, the large surface area with abundant surface defects of CQDs and trap‐assisted non‐radiative recombination losses at the interface between CQDs and charge‐transport layer limit their optoelectronic performance. To address this issue, an interface heterojunction strategy is proposed to protect the CQDs interface by incorporating a thin layer of polyethyleneimine (PEIE) to suppress trap‐assisted non‐radiative recombination losses. This thin layer not only acts as a protective barrier but also modulates carrier recombination and extraction dynamics by forming heterojunctions at the buried interface between CQDs and charge‐transport layer, thereby enhancing the interface charge extraction efficiency. This enhancement is demonstrated by the shortened lifetime of carrier extraction from 0.72 to 0.46 ps. As a result, the resultant PbS CQD solar cells achieve a power‐conversion‐efficiency (PCE) of 13.4% compared to 12.2% without the heterojunction.

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Section: Introductionmentioning

confidence: 99%

Interfacial Heterojunction Enables High Efficient PbS Quantum Dot Solar Cells

Zhang,

Chen,

Cao

et al. 2024

Advanced Science

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Optimizing Surface Passivation of n‐Type Quantum Dots for Efficient PbS Quantum Dot Solar Cells

Huang,

Wu,

Chen

et al. 2024

Solar RRL

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The n‐type quantum dot active layer is the core component of lead sulfide quantum dot solar cells (PbS QDSCs). In the state‐of‐the‐art PbS QDSCs, the active layer is commonly obtained through liquid‐phase ligand exchange. Adjusting the ratio between halide ligands and the original PbS QD (oleic acid ligands) during the liquid‐phase ligand exchange process is crucial for achieving better surface passivation of QDs by short‐chain halides, as well as reducing surface defects of the QDs. Due to the intricate chemical state of the ligand exchange solution providing halide ligand, therefore, we used the original QD (PbS‐OA QD) solutions at concentrations of 20 mg/ml, 30 mg/ml, and 40 mg/ml for liquid‐phase ligand exchange, aiming to investigate the reasons for the formation of different surface states post‐exchange and their impact on device performance. The results indicate that when the concentration of the PbS‐OA QD solution is 30 mg/ml, the exchanged QDs exhibit complete removal of surface OA, a higher content of short‐chain ligand PbX2 (X=I, Br), achieving optimal passivation, and a significant reduction in surface defects. Consequently, devices fabricated using PbS‐PbX2 QD ink obtained through the exchange of 30 mg/ml PbS‐OA QD solution achieved a higher power conversion efficiency (PCE) of 12.53%. This study presents a simple and effective strategy to enhance the performance of PbS QDSCs.This article is protected by copyright. All rights reserved.

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