2006
DOI: 10.1143/jjap.45.9063
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Reduction in Escape Times of Photogenerated Charge Carriers with Asymmetric Intrastep Quantum Wells and Subsequent Improvement in Saturation Optical Intensity

Abstract: In this work we compile a few ordinary differential equations (ODEs) that arise from the relativistic equations in cosmological models that consider the 'constant' as scalars functions dependent on time and they are described as perfect as well as viscous fluids. The general idea of the paper is to show how to solve the models (i.e. their equations) through dimensional techniques. The results are compared with those of other authors and new solutions are shown.PACS numbers: 9880H, 0420 † We understand that thi… Show more

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Cited by 7 publications
(3 citation statements)
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“…In this case of 'resonance', the RF gain can be enhanced, exceeding the gain limit. In [9], a possible case when the photocurrent resistance exhibits a negative value is examined with an EAM with intrastep quantum wells (IQWs) [10]. Here, we explore how this enhanced RF gain due to the resonance depends on the modulation frequency.…”
Section: Rf Gain Enhancement Duementioning
confidence: 99%
“…In this case of 'resonance', the RF gain can be enhanced, exceeding the gain limit. In [9], a possible case when the photocurrent resistance exhibits a negative value is examined with an EAM with intrastep quantum wells (IQWs) [10]. Here, we explore how this enhanced RF gain due to the resonance depends on the modulation frequency.…”
Section: Rf Gain Enhancement Duementioning
confidence: 99%
“…The selected IQW structure to examine the effect of layer variations is composed of an In 0:53 Ga 0:47 As (bandgap energy, E g ¼ 0:750 eV) well, an In 0:61 Ga 0:39 As 0:82 P 0:18 (E g ¼ 0:840 eV) intrastep barrier (step barrier inside the conventional QW), and In 0:81 Ga 0:19 As 0:41 P 0:59 (E g ¼ 1:078 eV) barriers, all lattice-matched to InP. 3) The thickness of the total well (intrastep + well) is 8.0 nm with a 4.0-nmthick intrastep barrier and a 4.0-nm-thick well. The structure mentioned above will henceforth be called ''original structure'' and serve as a reference.…”
mentioning
confidence: 99%
“…Due to the increased operation electric field, the IQW EAM can have a higher saturation optical power than the conventional QW EAM and therefore provide benefits such as enhanced link RF gain. 3) When one actually grows the IQW structure, however, one may not obtain the characteristics and performance that are estimated by the modeling. Possible reasons that account for the discrepancy between the actually grown sample and the modeled structure could be the thickness and composition variations of the epitaxial layers that constitute the IQW structure.…”
mentioning
confidence: 99%