Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes

Abstract

We designed a high electron mobility transistor (HEMT) epitaxial structure based on an AlGaN/GaN heterojunction, utilizing Silvaco TCAD, and selected AlGaN with an aluminum composition of 0.1 as the back-barrier of the AlGaN/GaN heterojunction. We enhanced the confinement of the two-dimensional electron gas (2DEG) by optimizing the structural parameters of the back barrier, so that the leakage current of the buffer layer is reduced. Through these optimization methods, a lower drain leakage current and a good radio frequency performance were obtained. The device has a cut-off frequency of 48.9 GHz, a maximum oscillation frequency of 73.20 GHz, and a radio frequency loss of 0.239 dB/mm (at 6 GHz). This work provides a basis for the preparation of radio frequency devices with excellent frequency characteristics and low RF loss.

Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic Pulse

“…The GaN high-electron-mobility transistor (HEMT) is a representative of wide-bandgap power semiconductor devices, which has great potential in high-frequency, high-power and high-temperature applications. This is because of the excellent properties of the GaN material [1], such as its higher electron mobility, saturation electron velocity and breakdown electric field, compared with Si and SiC [2][3][4][5][6][7][8]. The applications of GaN HEMT devices in harsh environments such as high-power microwave (HPM), high-power electromagnetic pulse (EMP) and particle irradiation make the reliability issues increasingly prominent.…”