Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates

Hayakawa, Tetsuo; Kondo, M.; Suyama, Takahito; Takahashi, Kosei; Yamamoto, Saburo; Hijikata, Toshiki

doi:10.1143/jjap.26.l302

Cited by 163 publications

(14 citation statements)

References 17 publications

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“…1 epitaxial III-V layers. [22][23][24] Here, we investigate if Cd 3 As 2 films can be grown epitaxially on (111) GaSb/GaAs substrates using molecular beam epitaxy (MBE). GaSb buffer layers were grown in situ by MBE on GaAs(111)A substrates, to reduce the lattice mismatch with the Cd 3 As 2 film (∼5% vs. ∼10% mismatch with GaSb and GaAs, respectively).…”

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confidence: 99%

Molecular beam epitaxy of Cd3As2 on a III-V substrate

et al. 2016

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Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam epitaxy. We show that epitaxial Cd3As2 layers can be grown at low temperatures (110 °C–220 °C), in situ, on (111) GaSb buffer layers deposited on (111) GaAs substrates. The orientation relationship is described by (112)Cd3As2 || (111) GaSb and [11¯0]Cd3As2 || [1¯01]GaSb. The films are shown to grow in the low-temperature, vacancy ordered, tetragonal Dirac semimetal phase. They exhibit high room temperature mobilities of up to 19300 cm2/Vs, despite a three-dimensional surface morphology indicative of island growth and the presence of twin variants. The results indicate that epitaxial growth on more closely lattice matched buffer layers, such as InGaSb or InAlSb, which allow for imposing different degrees of epitaxial coherency strains, should be possible.

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confidence: 99%

Molecular beam epitaxy of Cd3As2 on a III-V substrate

et al. 2016

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“…[2][3][4][5] An enhancement of optical transition in QWs grown on ͑111͒B substrates and thus a reduced threshold current density of laser diode have been demonstrated. 6,7 Also, improved electron mobility in Sidoped ͑111͒B AlGaAs has been observed. 8 Similar advantages have also been reported for heterostructures grown on ͑111͒A substrates.…”

Section: Introductionmentioning

confidence: 89%

Growth of p-type GaAs∕AlGaAs(111) quantum well infrared photodetector using solid source molecular-beam epitaxy

Mei

Karunasiri

et al. 2005

Journal of Applied Physics

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A p-type GaAs∕AlGaAs multi-quantum-well infrared photodetector (QWIP) was fabricated on a GaAs (111)A substrate by molecular-beam epitaxy using silicon as dopant. The same structure was also grown on a GaAs (100) wafer simultaneously to compare the material and structural properties. It was found that Si acts as a p-type dopant in the GaAs (111)A sample while it is n-type in the GaAs (100) counterpart. The growth rate was found to be appreciably enhanced for GaAs (111)A compared with that of GaAs (100) orientation, while the Al composition in the barriers was found to be 20% smaller for a (111) orientation which results in a smaller barrier height. A peak responsivity of 1mA∕W with a relatively wide wavelength response (Δλ∕λp∼53%) was observed for the GaAs (111)A QWIP, mainly due to the location of the excited state far above the barrier. The photoresponse also showed a relatively strong normal incident absorption probably originating from the mixing of the conduction and valence Bloch states. The optimization of the quantum well parameters should further enhance the responsivity of this p-type QWIP with Si as dopant species.

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“…Enhanced optical transition in QW grown on (1 1 1)B substrates and thus a reduced threshold current density of laser diode has been demonstrated [3,4]. Improved electron mobility in Si-doped (1 1 1)B AlGaAs to that of (1 0 0) has been also been observed [5].…”

Section: Introductionmentioning

confidence: 92%