Reduction of boron penetration through thin silicon oxide with a nitrogen doped silicon layer

Physicochemical Characterization of Annealed PolySi/NIDOS/SiO2 Structures

“…[9][10][11] In previous works, we have proposed an original solution by the insertion of a nitrogen-doped layer (NIDOS) between the polySi gate and the insulator. [12] The main advantages of this two-layer gate engineering approach are controlling the nitrogen concentration in the 4-nm-thick NIDOS layer during the LPCVD deposition and the large grain size of the amorphous as-deposited silicon film at low temperature with disilane gas source. Gate depletion has been observed when using the standard boron implantation=annealing process to electrically activate the Pþ gate, even without the NIDOS film at the interface, and boron penetration was reduced when using the NIDOS film.…”

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

“…[4][5][6][7] Fulfilling these objectives require not only to shrink the transistor dimensions, but also to introduce new materials and structures able to preserve the quality of the gate/oxide interface and to keep the deep diffusion of B impurities far from the oxide layer. Several solutions have been proposed in MOS structure such as replacing the Si oxide layer by high dielectric permittivity materials, [8][9][10] varying the elaboration method, the doping techniques and thermal annealing [11][12][13] or using multilayer gate transistors. 14) In a previous work, we studied the influence of low temperature annealing durations on B diffusion in multilayer B-doped polycrystalline silicon (poly-Si) (poly1)/undoped amorphous silicon (a-Si) (poly2)/Si oxide (SiO 2 ) deposited by LPCVD.…”