Reduction of crystalline disorder in molecular beam epitaxy GaAs on Si by MeV ion implantation and subsequent annealing

Abstract

Molecular beam epitaxy GaAs films on Si, with thicknesses ranging from O-9-2.0 ,um, were implanted with Si ions at 1.2-2.6 MeV to doses in the range 10'5-1016 cm-'. Subsequent rapid infrared thermal annealing was carried out at 850 "C for 15 s in a flowing Nz atmosphere. Crystalline quality was analyzed by using Rutherfold backscattering/channeling technique and Raman scattering spectrometry. The experimental results show that the recrystallization process greatly depends on the dose and energy of implanted ions. Complete recrystallization with better crystalline quality can be obtained under proper implantation and subsequent annealing. In the improved layer the defect density was much lower than in the as-grown layer, especially near the interface. 4844

The impact of morphology upon the radiation hardness of ZnO layers

“…In our opinion, this observation is indicative of the improvement of the crystalline quality of samples as compared to the as-grown state. Note that previously improvement of the crystalline perfection was observed in InP samples implanted with 100 keV He + ions at the dose 1 × 10 15 cm −2 subjected to annealing at 600-700 • C [40] as well as in molecular beam epitaxial GaAs films implanted with Si ions at 1.2-2.6 MeV to doses in the range of 10 15 -10 16 cm −2 and subjected to rapid thermal annealing at 850 • C [41]. Implantation induced removal of thermally stable defect clusters related to the growth process is supposed to be primarily responsible for the phenomenon involved.…”

Raman spectroscopy of porous and bulk GaP subjected to MeV-ion implantation and annealing

“…13 Defects and lattice stress produced by ion implantation can be effectively removed by thermal annealing, at the same time this provides an electrical activation of the implanted impurities. 14,15 Taking into account possible device applications 16 of porous semiconductor structures, the impact of processing, e.g., ion implantation and rapid thermal annealing ͑RTA͒, has to be investigated. Raman spectroscopy represents a powerful technique for obtaining microscopic information about the state of semiconductor material subjected to ion implantation and annealing.…”