2014
DOI: 10.5573/jsts.2014.14.5.588
|View full text |Cite
|
Sign up to set email alerts
|

Reduction of Current Crowding in InGaN-based Blue Light-Emitting Diodes by Modifying Metal Contact Geometry

Abstract: Abstract-Current crowding problem can worsen the internal quantum efficiency and the negative-voltage ESD of InGaN-based LEDs. In this paper, by using photon emission microscope and thermal emission microscope measurement, we confirmed that the electric field and the current of the InGaN-based LED sample are crowded in specific regions where the distance between p-type metal contact and n-type metal contact is shorter than other regions. To improve this crowding problem of electric field and current, modified … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2019
2019
2021
2021

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
references
References 16 publications
0
0
0
Order By: Relevance