Reduction of Defects after Poly Si CMP with Oxide Slurry

Yun, Seong-Kyu; Han, Sang-Yeob; Lee, Jae-Dong; Hong, Yi Koan; Park, Jin-Goo; Yun, Bo Un; Hong, Chungpyo; Cho, Han-Ku; Moon, Joo-Tae

doi:10.1149/ma2006-02/23/1141

Meet. Abstr.

2006

DOI: 10.1149/ma2006-02/23/1141

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Reduction of Defects after Poly Si CMP with Oxide Slurry

Seong-Kyu Yun¹,

Sang-Yeob Han²,

Jae-Dong Lee³

et al.

Abstract: not Available.

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“…3. The organic particles are major defects during metal and poly silicon CMP which may be caused by the surface reaction of organic sources with surfaces [4,5].…”

mentioning

confidence: 99%

Surface Preparation in CMP Process; Post CMP Cleaning and Defects

Park

2007

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“…3. The organic particles are major defects during metal and poly silicon CMP which may be caused by the surface reaction of organic sources with surfaces [4,5].…”

mentioning

confidence: 99%

Surface Preparation in CMP Process; Post CMP Cleaning and Defects

Park

2007

Meet. Abstr.

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Reduction of Defects after Poly Si CMP with Oxide Slurry

Abstract: not Available.

Cited by 1 publication

References 1 publication

Surface Preparation in CMP Process; Post CMP Cleaning and Defects

Surface Preparation in CMP Process; Post CMP Cleaning and Defects

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