Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole

Tallaire, Alexandre; Brinza, Ovidiu; Mille, V.; William, L.; Achard, Jocelyn

doi:10.1002/adma.201604823

Cited by 55 publications

(29 citation statements)

References 42 publications

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“…In case of epitaxial growth of single crystals the growth rate and defect abundance depend on the diamond substrate face orientation, a less number of the defects forming on {100} facets [9]. Particularly, dislocation density can be significantly reduced by a lateral growth on {100} oriented substrate with a hole intentionally perforated in it as recently shown by Tallaire et al [10].…”

Section: Introductionmentioning

confidence: 70%

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

et al. 2017

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Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC) high-pressure high temperature (HPHT) diamond substrate by a microwave plasma CVD in CH 4 -H 2 -N 2 gas mixture with the high concentration (4%) of nitrogen is studied. A beveled SC diamond embraced with low-index {100}, {110}, {111}, {211}, and {311} faces was used as the substrate. Only the {100} face is found to sustain homoepitaxial growth at the present experimental parameters, while nanocrystalline diamond (NCD) films are produced on other planes. This observation is important for the choice of appropriate growth parameters, in particular, for the production of bi-layer or multilayer NCD-on-microcrystalline diamond (MCD) superhard coatings on tools when the deposition of continuous conformal NCD film on all facet is required. The development of the film morphology with growth time is examined with SEM. The structure of hillocks, with or without polycrystalline aggregates, that appear on {100} face is analyzed, and the stress field (up to 0.4 GPa) within the hillocks is evaluated based on high-resolution mapping of photoluminescence spectra of nitrogen-vacancy NV optical centers in the film.

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Section: Introductionmentioning

confidence: 70%

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

et al. 2017

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“…Further optimization of surface pretreatment together with stabilized CVD growth are required to obtain diamond crystals with a minimized dislocation density. In addition, a new growth strategy using an engineered substrate with a macroscopic hole was recently proposed . By lateral growth of a crystal over a macroscopic hole pierced into a standard substrate, TD propagation was almost suppressed in the central part of the crystal.…”

Section: Decreasing the Dislocation Density Of Diamondmentioning

confidence: 99%

Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination

Ohmagari

Yamada

Tsubouchi

et al. 2019

Physica Status Solidi (a)

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A major obstacle limiting diamond electronics is dislocations, which deteriorate device properties. As threading dislocations (TDs) are normally inherited from the substrate to the epitaxial layer, control and annihilation of their propagation are important. Herein, metal-assisted termination (MAT), in which the propagation of dislocations is suppressed by in situ metal doping, is proposed. Heavy W doping is realized by a hot-filament (HF) chemical vapor deposition (CVD) using heated wires at a high temperature of >2400-K. A large reduction of TD density is confirmed by cathodoluminescence studies and etch-pit analysis. The impact of dislocation reduction is investigated electrically. After insertion of the MAT buffer layer, Schottky barrier diodes (SBDs) show improved rectifying action and highly uniform characteristics even when substrates with high dislocation densities (mosaic and heteroepitaxial wafers) are used. The 3D structure of dislocation propagation is successfully captured by two-photon-excited photoluminescence (2PPL) imaging of Band-A luminescence. The 2PPL Band-A luminescence (without band-edge excitation) shows high spatial resolution in the depth direction. An abrupt decrease in TD density is captured for heteroepitaxial substrates with an inserted MAT buffer layer. The MAT technique provides an effective approach to realize high-performance diamond electronics.

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“…Recently, several works reported some substrate pretreatments aiming at reducing and inhibiting the creation of secondary dislocations . Other studies demonstrated the possibility to limit the impact of primary dislocations by deviating them . Such strategies reduced by a few orders of magnitude of the dislocations density down to 10 4 cm −2 and can be very efficient, but most of these studies were mainly developed for intrinsic films.…”

Section: Introductionmentioning

confidence: 99%

Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping

Issaoui

Tallaire

Mrad

et al. 2019

Physica Status Solidi (a)

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For the fabrication of vertical power electronic components, the use of a freestanding highly boron-doped single crystal diamond substrate is mandatory, on top of which a thin low-doped active layer is overgrown. The crystalline quality of this substrate is of prime importance as the high doping level required is also likely to lead to the generation of extended defects in the active layer. Herein, the improvement of the quality of thick highly boron-doped diamond films grown by chemical vapor deposition (CVD) is investigated. Codoping with a low amount of nitrogen is explored as a way to limit the formation and propagation of extended defects. It is shown that the growth rate and boron concentration are not impacted by the addition of nitrogen with the parameters used in this study. Surface morphology and defect density estimated for each amount of nitrogen are presented; and Raman spectroscopy confirms that nitrogen addition compensates the strain induced by boron incorporation in single crystal diamond. Codoping with nitrogen is thus demonstrated as a useful strategy to obtain high quality boron-doped diamond substrates potentially suitable for the development of power devices.

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Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole

Cited by 55 publications

References 42 publications

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

Toward High‐Performance Diamond Electronics: Control and Annihilation of Dislocation Propagation by Metal‐Assisted Termination

Defect and Threading Dislocations in Single Crystal Diamond: A Focus on Boron and Nitrogen Codoping

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