Reduction of Donor-like Interface Traps of n-Type Metal–Oxide–Semiconductor Field-Effect-Transistors Using Hydrogen-Annealed Wafer and In-situ HF-Vapor Treatment

Abstract

A mixed-spin model on a Kagomt lattice with a pure imaginary magnetic field in is solved exactly. The model exhibits a Baxter-type transition. 03 J : J 2 01 J3 02