Reduction of gate hysteresis above ambient temperature via ambipolar pulsed gate sweeps in carbon nanotube field effect transistors for sensor applications

Mattmann, Moritz; Bechstein, Daniel J.B.; Roman, Cosmin; Chikkadi, Kiran; Hierold, Christofer

doi:10.1063/1.3499363

Cited by 23 publications

(22 citation statements)

References 17 publications

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“…3a, the hysteresis of a composite-TFT of L ¼ 20 mm is almost completely eliminated using the AP method, confirming that the OH À -induced excessive carriers during the positive V g pulse are immediately removed by the subsequent negative pulse. All our devices operating in the percolation regime show hysteresis behaviour consistent with the previous work on CNN-TFTs [34][35][36][37] . In sharp contrast, the AP method causes little difference from the continuous sweeping regarding the hysteresis behaviour of longchannel devices (L ¼ 1,000 mm) (Fig.…”

Section: Resultssupporting

confidence: 76%

Interaction of bipolaron with the H2O/O2 redox couple causes current hysteresis in organic thin-film transistors

Liu

et al. 2014

Nat Commun

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Hysteresis in the current-voltage characteristics is one of the major obstacles to the implementation of organic thin-film transistors in large-area integrated circuits. The hysteresis has been correlated either extrinsically to various charge-trapping/transfer mechanisms arising from gate dielectrics or surrounding ambience or intrinsically to the polaron-bipolaron reaction in low-mobility conjugated polymer thin-film transistors. However, a comprehensive understanding essential for developing viable solutions to eliminate hysteresis is yet to be established. By embedding carbon nanotubes in the polymer-based conduction channel of various lengths, here we show that the bipolaron formation/recombination combined with the H 2 O/O 2 electrochemical reaction is responsible for the hysteresis in organic thin-film transistors. The bipolaron-induced hysteresis is a thermally activated process with an apparent activation energy of 0.29 eV for the bipolaron dissociation. This finding leads to a hysteresis model that is generally valid for thin-film transistors with both band transport and hopping conduction in semiconducting thin films.

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Section: Resultssupporting

confidence: 76%

Interaction of bipolaron with the H2O/O2 redox couple causes current hysteresis in organic thin-film transistors

Liu

et al. 2014

Nat Commun

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“…For high V DS , however, the hysteresis starts to appear again in the pulsed opposing sweep as the charge capture and emission mechanism is dominant here which is not symmetrical. c) Fast pulsed DC sweep: A more suitable approach to remove the effect of the traps on the transistor response during a measurement sweep is to measure in pulsed mode with pulse widths which are much shorter than the time constants of the traps and a very low duty cycle [17] [18] [11] [19]. This can be seen in the right plot of Fig.…”

Section: Experimental Observationsmentioning

confidence: 99%

Electrical Characterization of Emerging Transistor Technologies: Issues and Challenges

Haferlach

Pacheco

Sakalas

et al. 2016

IEEE Trans. Nanotechnology

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Experimental results gained by various electrical characterization techniques are discussed and compared for a CNTFET technology, which suffers as almost all emerging technologies from traps in the gate oxide. Based on these results, it is highlighted that, contrary to common practice, a fast data acquisition technique is required to ensure a proper electrical device characterization in terms of (i) trap-free device characteristics, (ii) reproducible experimental results and (iii) a consistent set of DC and small-signal (AC) characteristics. It is argued that a reasonable technology comparison among emerging technologies must be based on data fulfilling these criteria since trap-affected measurements distort the device behavior which can lead to wrong conclusions about the performance of a device such as the apparent linearity. A trap model capturing the above mentioned issues is briefly introduced. Moreover, the challenges of the electrical characterization of high-impedance devices are explored.

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“…In addition, suspended carbon nanotube channels have also been found to be very effective in preventing direct contact between external charges on the substrate and the SWNT surface 18. Other methods include the employment of graphene electrodes with few interface trap charges,13 the control of the gate sweep rate,12 the short‐pulsed gate bias, and thermal annealing 19. Reflecting how an increase in the gate‐voltage sweep leads to more‐prominent hysteresis, operation of a SWNT transistor under a low voltage can reduce hysteresis if combined with high‐ k dielectrics20, 21 or an ionic‐electrolyte gate insulator 22, 23…”

Section: Introductionmentioning

confidence: 99%

Control of Current Hysteresis of Networked Single‐Walled Carbon Nanotube Transistors by a Ferroelectric Polymer Gate Insulator

Choi

Sung

Kang

et al. 2012

Adv Funct Materials

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Films made of 2D networks of single-walled carbon nanotubes (SWNTs) are one of the most promising active-channel materials for fi eld-effect transistors (FETs) and have a variety of fl exible electronic applications, ranging from biological and chemical sensors to high-speed switching devices. Challenges, however, still remain due to the current hysteresis of SWNT-containing ( ≈ 50 MV m − 1 ). These near-hysteresis-free characteristics are believed to be due to the characteristic hysteresis of the P(VDF-TrFE), resulting from its non-volatile polarization, which makes effective compensation for the current hysteresis of the SWNT-network FETs. The onset voltage for hysteresis-minimized operation is able to be tuned simply by controlling the thickness of the ferroelectric fi lm, which opens the possibility of operating hysteresis-free devices with gate voltages down to a few volts. FETs, which has hindered further development. A new and robust method to control the current hysteresis of a SWNT-network FET is presented, which involves the non-volatile polarization of a ferroelectric poly(vinylidene fl uoride-trifl uoroethylene) (P(VDF-TrFE)) gate insulator. A top-gate FET with a solution-processed SWNT-network exhibits signifi cant suppression of the hysteresis when the gate-voltage sweep is greater than the coercive fi eld of the ferroelectric polymer layer

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Reduction of gate hysteresis above ambient temperature via ambipolar pulsed gate sweeps in carbon nanotube field effect transistors for sensor applications

Cited by 23 publications

References 17 publications

Interaction of bipolaron with the H2O/O2 redox couple causes current hysteresis in organic thin-film transistors

Interaction of bipolaron with the H2O/O2 redox couple causes current hysteresis in organic thin-film transistors

Electrical Characterization of Emerging Transistor Technologies: Issues and Challenges

Control of Current Hysteresis of Networked Single‐Walled Carbon Nanotube Transistors by a Ferroelectric Polymer Gate Insulator

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