Reduction of image placement errors in EPL masks

Wood, O. R.; Reu, Phillip L.; Engelstad, Roxann L.; Lovell, Edward G.; Lercel, Michael J.; Thiel, Carey W.; Lawliss, Mark; Mackay, R. Scott

doi:10.1117/12.490136

Cited by 3 publications

(2 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…6 Chucking for an E-beam writer, and an IP metrology tool common to that for the exposure tool is proposed.…”

Section: Introductionmentioning

confidence: 99%

“…Local IP errors have been measured to investigate such correlations. 4,6 Maximum local IP distortions have been estimated by simulations based on finite element methods. [8][9][10] In this paper we report the results on the local IP error measured by using a suspension type ES chuck and discuss the effect of the membrane stress and the pattern density to the local IP error.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

200-mm EPL stencil mask fabrication and metrology at DNP: IP and CD accuracy within subfield

et al. 2004

View full text Add to dashboard Cite

Electron beam projection lithography (EPL) has been developed for application to 65 nm node devices and beyond. 200-mm EPL masks have also been developed keeping pace with the exposure tool. Image placement (IP) accuracy is a necessary quality assurance item to bring masks into production. A suspension type electrostatic chuck designed for EPL mask measurement for an IP metrology tool Leica LMS IPRO was prepared for measurement of local IP errors, defined for each subfiled. The chuck holds the mask on its membrane-side surface right side up. Three 200-mm stencil masks with tensile membrane stresses of 8, 18, and 43 MPa were fabricated. The IP error is found to increase as the stress increases. Marks in the area of a high pattern density with a void fraction of 0.2 moved toward the area of a low pattern density with a void fraction of 0.016. The IP errors did not strongly depend on the kinds of dummy patterns (either hole or L&S) having the same void fraction of 0.25 and macroscopic uniformity. If the stress is less than 10 MPa, the IP error (3 sigma) is less than 10 nm, satisfying the EPL mask requirement. Local CD accuracy was also evaluated for a mask with a membrane stress of 8 MPa.

show abstract

“…6 Chucking for an E-beam writer, and an IP metrology tool common to that for the exposure tool is proposed.…”

Section: Introductionmentioning

confidence: 99%