Reduction of Incubation Period by Employing OH-Terminated Si(001) Substrates in the Atomic Layer Deposition of Al<sub>2</sub>O<sub>3</sub>

Lee, Sun S.; Baik, Jaeyoon; An, Ki‐Seok; Suh, Yung Doug; Oh, Jeong-Hoon; Kim, Yunsoo

doi:10.1021/jp048038b

Cited by 41 publications

(37 citation statements)

References 36 publications

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“…The first option, resembling a unimolecular substitution reaction, is intuitively easier to conceptualize occurring on a surface than its S N 2 counterpart, largely due to the stereochemical consequences traditionally associated with a bimolecular reaction. Nevertheless, S N 2-like mechanisms have been proposed on chlorinated silicon substrates and shown to be thermodynamically possible with theoretical calculations 27,28. Single-molecule gas phase studies of S N 2 reactions have also led to the proposal of an alternative mechanism pathway, which support the feasibility of a bimolecular substitution occurring on a surface.…”

Section: Discussionmentioning

confidence: 99%

Formation and Stability of Alkylthiol Monolayers on Carbon Substrates

Lockett

Smith

2010

J. Phys. Chem. C

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The formation and stability of alkylthiol monolayers on amorphous carbon thin films are investigated. Alkylthiol monolayers were prepared via a two-step, wet chemical process in which the carbon surface was first halogenated and then incubated with (4-(trifluoromethyl)phenyl)methanethiol (4tBM). The 4tBM covalently attaches to the surface in a substitution reaction in which the 4tBM thiol replaces the surface halogen. Studies of the substitution mechanism showed that monolayer formation is affected by the nature of the surfacebound halogen as well as the concentration and nucleophilicity of the 4tBM sulfur atom, consistent with a bimolecular (S N 2) substitution reaction mechanism. The alkylthiol monolayers are stable over a wide range of solvent, pH, and temperature conditions.

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Section: Discussionmentioning

confidence: 99%

Formation and Stability of Alkylthiol Monolayers on Carbon Substrates

Lockett

Smith

2010

J. Phys. Chem. C

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“…12,13,18 Since the ALD growth is strongly dependent on the starting surface, the steady-state growth is obtained faster on the SC2 cleaned as compared to HF dipped Si, where lower reactivity of TMA and longer incubation time has been observed. 19 It is likely that in the case of thin chemical SiO 2 layer resulting from SC2 cleaning, there are less hydrogen residues at the interface, which decreases the amount of released hydrogen thus preventing the blistering. 17…”

Section: Blisteringmentioning

confidence: 99%

Effect of substrate pretreatments on the atomic layer deposited Al2O3 passivation quality

Bao¹,

Li²,

Gastrow³

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The authors show here that the passivation quality of Al2O3 is highly sensitive to the surface condition prior to the atomic layer deposition, affecting especially the thermal stability of the film. Pretreatments like diluted HCl bath or preheating at 200 °C both improved significantly the passivation quality and thermal stability of the films. In addition, the authors observed that a thin chemical SiO2 layer resulting from diluted HCl solves the blistering problem often encountered in H2O based atomic layer deposited process. Finally, the authors show that the chemical oxide protects the surface from contaminants, enabling long storage times in a dirty ambient between the cleaning and the film deposition.

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“…Device Preparation and Electrical Characterization : P‐doped Si substrates (1–10 Ω cm resistivity range) were first cleaned using the modified Shiraki treatment without removal of the final chemical oxide . This method of Si cleaning was employed to introduce a significant number of hydroxyl species on the surface, which was found to aid high‐quality ultrathin ALD alumina growth . Having surface hydroxyl groups on Si substrates typically resulted in the initial ALD film growth to be more homogenous when compared to initial film growth on H‐terminated Si surfaces (where island growth was reported to be initially prevailing) .…”

Section: Methodsmentioning

confidence: 99%

Influence of Pt Nanoparticle Induced Defects and Surface Coverage in Determining Asymmetric Programming/Erasing Signatures for Nanocrystal Embedded Nonvolatile Memory Applications

Mukherjee

Zheng

Gangopadhyay

et al. 2016

Adv Materials Inter

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semiconductor counterpart due to large density of states, 3D electric fi eld enhancement, and selectable work function. [ 1,[3][4][5][6] Considerable work has focused on the controlled synthesis of metallic NCs for use in NVM devices. Although a wide range of metal nanocrystals have been utilized to realize functioning NVM, the lack of control over the embedded NP size, interparticle distance (areal density) makes it diffi cult to investigate the electron/hole charging characteristics as a function of embedded nanocrystal properties. To achieve the desired metal NP embedded layer for NVM applications, a CMOS compatible tilted target sputtering (TTS) technique has been previously developed [ 7 ] and is employed in this study to achieve nanoparticles (NPs) with controllable sizes, areal densities, and narrow size distributions. Using the TTS technique, the average size of the NPs can be effectively controlled by varying the deposition time with constant pressure, power, and gas fl ow rate at room temperature. [ 7,8 ] This technique has been shown to produce uniformly distributed spherical Pt NPs with mean diameters between 0.5 and 2 nm, and for certain process parameters, high areal densities as large as 10 13 cm −2 . Although embedding these Pt NPs in Al 2 O 3 has resulted in NVM devices displaying large memory windows and excellent retention characteristics, [ 5,6 ] a systematic study analyzing the effect of the deposited Pt NP size, areal density, and surface coverage on the quality/magnitude of introduced trap within the surrounding dielectric has not been reported yet. In this study, the infl uence of TTS sputtered Pt NP size, areal density, and surface coverage on the charging/discharging characteristics of Pt NP embedded NVM MOS capacitors has been explored. Three different Pt Np size domains (0.7, 0.9, and 1.6 nm) and two different areal density domains (≈5 × 10 12 cm −2 and ≈10 × 10 12 cm −2 ) were explored under the realms of this study utilizing variable frequency and scan rate dependent capacitance-voltage ( C -V ) and conductance-voltage ( G -V ) measurements. The observed experimental anomalous features within the C -V and G -V signatures have been correlated to the infl uence of different types Metal nanocrystal embedded nonvolatile memory (NVM) devices have attracted signifi cant attention over the past two decades as promising alternatives to conventional fl oating gate memory devices. This study explores the applicability of sub-2 nm Pt nanoparticle (NP) embedded in ALD Al 2 O 3 as charge storage nodes in Si-based NVM devices. The infl uence of Pt NPinduced border traps within Al 2 O 3 near the Si surface and their surface coverage dependent pinning of Pt NP work function are explored as part of this study. The pinning of the nanocrystal memories induced by a high density of dangling bonds near the Pt NP/Al 2 O 3 interface skews the expected charging/ discharging characteristics with electron programming favored over holes. The degree of this pinning has been probed utilizing C -V measurements and...

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Reduction of Incubation Period by Employing OH-Terminated Si(001) Substrates in the Atomic Layer Deposition of Al₂O₃

Cited by 41 publications

References 36 publications

Formation and Stability of Alkylthiol Monolayers on Carbon Substrates

Formation and Stability of Alkylthiol Monolayers on Carbon Substrates

Effect of substrate pretreatments on the atomic layer deposited Al2O3 passivation quality

Influence of Pt Nanoparticle Induced Defects and Surface Coverage in Determining Asymmetric Programming/Erasing Signatures for Nanocrystal Embedded Nonvolatile Memory Applications

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Reduction of Incubation Period by Employing OH-Terminated Si(001) Substrates in the Atomic Layer Deposition of Al2O3

Cited by 41 publications

References 36 publications

Formation and Stability of Alkylthiol Monolayers on Carbon Substrates

Formation and Stability of Alkylthiol Monolayers on Carbon Substrates

Effect of substrate pretreatments on the atomic layer deposited Al2O3 passivation quality

Influence of Pt Nanoparticle Induced Defects and Surface Coverage in Determining Asymmetric Programming/Erasing Signatures for Nanocrystal Embedded Nonvolatile Memory Applications

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Reduction of Incubation Period by Employing OH-Terminated Si(001) Substrates in the Atomic Layer Deposition of Al₂O₃